A X Band Ceramic Package with Kilowatt-level High-power and Low Loss

Yangfan Zhou, Lin-jie Liu, Zhizhuang Qiao, Kems-Gwor Wang, Gaiwen Liu
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引用次数: 1

Abstract

With the increase of the power density of microwave power devices, the ceramic packages of microwave power devices are required a high frequency, low loss and high heat dissipation. A X band ceramic package with kilowatt-level high-power and low-loss is designed based on diamond/Cu composites which is a very important heat dissipation material in high-power microwave devices. In order to avoid the air breakdown of arc phenomenon and improve the current carrying capacity of ceramic insulator, the insulator of ceramic package for kilowatt-level microwave high-power device has changed the conventional side metallization structure and adopted the side special-shaped metallization structure. In addition, the RF transmission structure of the package has a low loss by optimizing with HFSS software and is manufactured by multilayer high-temperature co-fired ceramic (HTCC) process. The measured results exhibit the return loss value better than 14 dB and the insertion loss value better than 0.25 dB over a wide frequency range from DC up to 12 GHz.
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一种具有千瓦级高功率低损耗的X波段陶瓷封装
随着微波功率器件功率密度的提高,对微波功率器件的陶瓷封装提出了高频、低损耗和高散热的要求。基于高功率微波器件中重要的散热材料金刚石/铜复合材料,设计了一种具有千瓦级高功率低损耗的X波段陶瓷封装。为了避免电弧空气击穿现象,提高陶瓷绝缘子的载流能力,千瓦级微波大功率器件陶瓷封装绝缘子改变了传统的侧金属化结构,采用了侧异形金属化结构。此外,该封装的射频传输结构采用多层高温共烧陶瓷(HTCC)工艺,通过HFSS软件优化,具有低损耗。测量结果表明,在直流至12 GHz的宽频率范围内,回波损耗值优于14 dB,插入损耗值优于0.25 dB。
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