Field-free Fast Reliable Deterministic Switching in Perpendicular Spin-Orbit Torque MRAM Cells

A. Makarov, V. Sverdlov, S. Selberherr
{"title":"Field-free Fast Reliable Deterministic Switching in Perpendicular Spin-Orbit Torque MRAM Cells","authors":"A. Makarov, V. Sverdlov, S. Selberherr","doi":"10.1109/SISPAD.2018.8551716","DOIUrl":null,"url":null,"abstract":"We demonstrate that the spin-orbit torques generated by two orthogonal consecutive current pulses enable reliable and deterministic switching of a perpendicularly magnetized free magnetic layer without applying an external magnetic field. The switching current can be reduced by allowing the wire through which the second pulse is delivered to overlap only partly with the free layer. Surprisingly, the partial overlap makes the switching faster and 100% robust.","PeriodicalId":170070,"journal":{"name":"2018 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","volume":"10 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2018-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SISPAD.2018.8551716","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1

Abstract

We demonstrate that the spin-orbit torques generated by two orthogonal consecutive current pulses enable reliable and deterministic switching of a perpendicularly magnetized free magnetic layer without applying an external magnetic field. The switching current can be reduced by allowing the wire through which the second pulse is delivered to overlap only partly with the free layer. Surprisingly, the partial overlap makes the switching faster and 100% robust.
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
垂直自旋-轨道转矩MRAM单元的无场快速可靠确定性切换
我们证明了由两个正交的连续电流脉冲产生的自旋轨道转矩可以在不施加外磁场的情况下可靠和确定地切换垂直磁化的自由磁层。通过允许第二脉冲通过的导线仅部分地与自由层重叠,可以减小开关电流。令人惊讶的是,部分重叠使切换更快,并且100%健壮。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 去求助
来源期刊
自引率
0.00%
发文量
0
期刊最新文献
Modeling Channel Length Scaling Impact on NBTI in RMG Si p-FinFETs Simulation of Hot-Electron Effects with Multi-band Semiconductor Devices Statistical Variability Simulation of Novel Capacitor-less Z2FET DRAM: From Transistor to}Circuit A versatile harmonic balance method in a parallel framework Inter-band coupling in Empirical Pseudopotential Method based bandstructure calculations of group IV and III-V nanostructures
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1