{"title":"A linear wide-dynamic-range BiCMOS operational transconductance amplifier for high frequency applications","authors":"A. Charoenrook, M. Soma","doi":"10.1109/APCCAS.1994.514615","DOIUrl":null,"url":null,"abstract":"This paper presents a very linear and wide dynamic range BiCMOS operational transconductance amplifier for use in high performance, high frequency analog and mixed-signal applications. The design structure of the input stage together with the optimized use of BiCMOS technology provides the OTA with wide dynamic range and very low distortion properties. Comparisons between MOSFET, bipolar and BiCMOS configurations of the conversion stage are presented. The frequency response of the circuit is also analyzed in detail, including frequency compensation techniques. Simulation results using a generic BiCMOS technology illustrate a THD of less than -68 dB at Vin=/spl plusmn/4 V at 50 MHz.","PeriodicalId":231368,"journal":{"name":"Proceedings of APCCAS'94 - 1994 Asia Pacific Conference on Circuits and Systems","volume":"119 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1994-12-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of APCCAS'94 - 1994 Asia Pacific Conference on Circuits and Systems","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/APCCAS.1994.514615","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
This paper presents a very linear and wide dynamic range BiCMOS operational transconductance amplifier for use in high performance, high frequency analog and mixed-signal applications. The design structure of the input stage together with the optimized use of BiCMOS technology provides the OTA with wide dynamic range and very low distortion properties. Comparisons between MOSFET, bipolar and BiCMOS configurations of the conversion stage are presented. The frequency response of the circuit is also analyzed in detail, including frequency compensation techniques. Simulation results using a generic BiCMOS technology illustrate a THD of less than -68 dB at Vin=/spl plusmn/4 V at 50 MHz.
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