{"title":"Accurate nonlinear modeling and verification of MMIC amplifier","authors":"V. Hwang, Y. Shih, H. Le","doi":"10.1109/MCS.1989.37258","DOIUrl":null,"url":null,"abstract":"An accurate MESFET nonlinear model and a reliable model verification approach that uses the on-wafer RF probing method are presented. The nonlinear model is based on small-signal S-parameter characterization of the MESFET at a wide range of bias voltages and is capable of accurately predicting the MMIC amplifier performances at various bias voltages, frequencies, and input power levels (both small and large signals). A model verification scheme is used that was designed to eliminate many measurement uncertainties. In this approach, the nonlinear model is verified by comparing the simulation results of a single-stage MMIC amplifier with the measurement data. The S-parameters of the amplifier's input and output matching circuits are first accurately measured using the on-wafer RF probes. These data are then input to the simulation program for the complete amplifier simulation. Simulation results for a MMIC amplifier at various frequencies, bias voltages, and power levels agree well with the measurement data.<<ETX>>","PeriodicalId":377911,"journal":{"name":"Digest of Papers.,Microwave and Millimeter-Wave Monolithic Circuits Symposium","volume":"93 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1989-06-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"12","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Digest of Papers.,Microwave and Millimeter-Wave Monolithic Circuits Symposium","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MCS.1989.37258","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 12
Abstract
An accurate MESFET nonlinear model and a reliable model verification approach that uses the on-wafer RF probing method are presented. The nonlinear model is based on small-signal S-parameter characterization of the MESFET at a wide range of bias voltages and is capable of accurately predicting the MMIC amplifier performances at various bias voltages, frequencies, and input power levels (both small and large signals). A model verification scheme is used that was designed to eliminate many measurement uncertainties. In this approach, the nonlinear model is verified by comparing the simulation results of a single-stage MMIC amplifier with the measurement data. The S-parameters of the amplifier's input and output matching circuits are first accurately measured using the on-wafer RF probes. These data are then input to the simulation program for the complete amplifier simulation. Simulation results for a MMIC amplifier at various frequencies, bias voltages, and power levels agree well with the measurement data.<>
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