Compound semiconductor physical device simulation for technology development at Motorola

Abstract

There is significant advantage to simulation-assisted device development in compound semiconductors At Motorola, 2D and 3D physics-based TCAD is heavily integrated into device development for communications. Effective simulation methods have been developed that allow us to reduce development cycle time, and cycles of learning to achieve cost competitive III-V market leading technologies. Our methodology includes analytical analysis, calibration to measured data, parameter study, and optimization of DC, small signal AC, RF, and thermal performance. This methodology has been used in pHEMT, HBT, and HIGFET development Application development, such as the pHEMT-based RF switch, has also used device simulation heavily. The fundamentals of this methodology will be discussed and examples from the technology areas will be presented.