Asymemetry in intermodulation distortion of HBT power amplifiers

Yu Wang, S. Cherepko, J.C.M. Hwang, Feiyu Wang, W. Jemison
{"title":"Asymemetry in intermodulation distortion of HBT power amplifiers","authors":"Yu Wang, S. Cherepko, J.C.M. Hwang, Feiyu Wang, W. Jemison","doi":"10.1109/GAAS.2001.964378","DOIUrl":null,"url":null,"abstract":"This work demonstrates the prediction of asymmetry in intermodulation distortion of HBT power amplifiers under two-tone excitation. While previous predictions were based on Volterra series in conjunction with a simple device model, the present approach is based on harmonic-balance simulation in conjunction with a nonlinear large-signal device model. The present approach is validated by the agreement between simulations and measurements under different bias, matching and input conditions as well as tone separations. The present result is consistent with the Volterra-series analysis of the effect of baseband termination impedance on the intermodulation asymmetry.","PeriodicalId":269944,"journal":{"name":"GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 23rd Annual Technical Digest 2001 (Cat. No.01CH37191)","volume":"8 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2001-10-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"7","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 23rd Annual Technical Digest 2001 (Cat. No.01CH37191)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/GAAS.2001.964378","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 7

Abstract

This work demonstrates the prediction of asymmetry in intermodulation distortion of HBT power amplifiers under two-tone excitation. While previous predictions were based on Volterra series in conjunction with a simple device model, the present approach is based on harmonic-balance simulation in conjunction with a nonlinear large-signal device model. The present approach is validated by the agreement between simulations and measurements under different bias, matching and input conditions as well as tone separations. The present result is consistent with the Volterra-series analysis of the effect of baseband termination impedance on the intermodulation asymmetry.
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HBT功率放大器互调失真的非对称性
本文研究了双音激励下HBT功率放大器互调失真的不对称性。以前的预测是基于Volterra级数和一个简单的器件模型,而现在的方法是基于谐波平衡模拟和一个非线性大信号器件模型。在不同的偏置、匹配和输入条件以及色调分离条件下,仿真结果与实测结果一致,验证了该方法的有效性。本文的结果与基带终端阻抗对互调不对称性影响的Volterra-series分析结果一致。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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60GHz-band high-gain MMIC cascode HBT amplifier An 850 nm wavelength monolithic integrated photoreceiver with a single-power-supplied transimpedance amplifier based on GaAs PHEMT technology A monolithic X-band class-E power amplifier Extremely high P1dB MMIC amplifiers for Ka-band applications Ultra low noise 2.5 Gbit/s 3.3V transimpedance amplifier with automatic gain control
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