A. Kurdoghlian, W. Lam, C. Chou, L. Jellian, A. Igawa, M. Matloubian, L. Larson, A. Brown, M. Thompson, C. Ngo
{"title":"High-efficiency InP-based HEMT MMIC power amplifier","authors":"A. Kurdoghlian, W. Lam, C. Chou, L. Jellian, A. Igawa, M. Matloubian, L. Larson, A. Brown, M. Thompson, C. Ngo","doi":"10.1109/GAAS.1993.394430","DOIUrl":null,"url":null,"abstract":"High-efficiency monolithic Q-band power amplifiers were developed using InP based HEMT MMIC technology. The amplifiers demonstrated state-of-the-art power performance including 33% power-added efficiency and 26 dBm of output power at 44 GHz. This is the highest output power reported with such a high efficiency for InP-based HEMT MMIC power amplifiers at Q-bands. The intended application is communication terminals.<<ETX>>","PeriodicalId":347339,"journal":{"name":"15th Annual GaAs IC Symposium","volume":"39 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1993-10-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"8","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"15th Annual GaAs IC Symposium","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/GAAS.1993.394430","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 8
Abstract
High-efficiency monolithic Q-band power amplifiers were developed using InP based HEMT MMIC technology. The amplifiers demonstrated state-of-the-art power performance including 33% power-added efficiency and 26 dBm of output power at 44 GHz. This is the highest output power reported with such a high efficiency for InP-based HEMT MMIC power amplifiers at Q-bands. The intended application is communication terminals.<>
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