Nanostructured Al-doped ZnO-based gas sensor prepared using sol-gel spin-coating method

Abstract

Nanostructured Aluminium (Al) doped zinc oxide (ZnO) was prepared using sol-gel spin-coating method. These films were tested under different exposure of oxygen flow rates at room temperature with bias voltage applied at 5 V. The structural properties were characterized using Atomic Force Microscopy (AFM) and Field Emission Scanning Electron Microscopy (FESEM). The fesem image revealed the surface morphology of nanostructured ZnO. The diameters size of nanostructured Al-doped ZnO thin film was observed in range of 16-46 nm. These thin films were tested for oxygen-sensing characteristic by varying the gas flow rates at room temperature. The nanostructured Al-doped ZnO-based gas sensor exhibited good sensitivity at low flow rates of oxygen exposure.