Memory System Architecture Optimization for Enterprise All-RRAM Solid State Drives

Lorenzo Zuolo, C. Zambelli, A. Grossi, R. Micheloni, Stephen Bates, P. Olivo
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引用次数: 4

Abstract

The Resistive RAM (RRAM) technology is emerging as one of the possible candidates in replacing state-of-the-art NAND Flash for Solid State Drives (SSDs) applications. However, the RRAM architectures developed so far evidence a granularity mismatch between their page size and the typical host application payloads, forcing the use of multi-plane approaches to mimic NAND Flash thus affecting the figures of merit (i.e., bandwidth, latency, and Quality of Service) of a potential "all-RRAM" SSD. In this work we present a RRAM memory system optimization acting both on the internal page size architecture and on the SSD's firmware to find the best configurations able to guarantee the highest performance metrics in enterprise-class SSD applications.
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面向企业级全rram固态硬盘的存储系统架构优化
电阻式RAM (RRAM)技术正在成为取代固态硬盘(ssd)应用中最先进的NAND闪存的可能候选技术之一。然而,到目前为止开发的RRAM架构证明了它们的页面大小和典型主机应用程序有效负载之间的粒度不匹配,迫使使用多平面方法来模拟NAND闪存,从而影响了潜在的“全RRAM”SSD的优点(即带宽、延迟和服务质量)。在这项工作中,我们提出了一种RRAM内存系统优化,该优化既作用于内部页面大小架构,也作用于SSD的固件,以找到能够保证企业级SSD应用中最高性能指标的最佳配置。
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