Graphene-ZnO:N Schottky junction based thin film transistor

S. Heo, Y.J. Kim, C. Kim, S. Lee, H. Lee, H. Hwang, J. Noh, B. Lee
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引用次数: 2

Abstract

Novel thin film transistor based on a graphene-ZnO Schottky junction has been demonstrated for display driver circuit applications. High transmittance over 80% in visible light wavelengths with a high on-off ratio over 104 are the merits of this device. All device fabrication processes completed at a temperature below 200°C will provide a unique advantage in the flexible display applications. The projected performance estimated by PSPICE using the experimental device parameters confirmed that this device is suitable for voltage programming pixel driver circuits.
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基于石墨烯- zno:N肖特基结的薄膜晶体管
基于石墨烯- zno肖特基结的新型薄膜晶体管已被证明可用于显示驱动电路。该器件在可见光波段具有80%以上的高透光率和104以上的高通断比。在低于200°C的温度下完成的所有器件制造工艺将在柔性显示应用中提供独特的优势。通过PSPICE对实验器件参数的预测性能估计,证实了该器件适用于电压编程像素驱动电路。
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