Effect of FIB milling on MEMS SOI cantilevers

C. Venkatesh, P. P. Singh, M. Renilkumar, M. Varma, N. Bhat, R. Pratap, M. Martyniuk, A. Keating, G. A. Umama-Membreno, K. Silva, J. Dell, L. Faraone
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Abstract

Stress induced by Focused Ion Beam (FIB) milling of cantilevers fabricated on silicon-on-insulator (SOI) wafer has been studied. Milling induces stress gradients ranging from -10MPa/μm to -120MPa/μm, depending on the location of cantilevers from the point of milling. Simulations were done to estimate the stress in the milled cantilevers.
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FIB铣削对MEMS SOI悬臂梁的影响
研究了聚焦离子束(FIB)铣削在绝缘体上硅(SOI)晶圆上制造悬臂梁时产生的应力。铣削产生的应力梯度范围从-10MPa/μm到-120MPa/μm,这取决于悬臂梁距离铣削点的位置。对铣削悬臂梁的应力进行了模拟计算。
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