{"title":"Feasibility of 50-nm device manufacture by 157-nm optical lithography: an initial assessment","authors":"Pong Wing Tai, A. Wong","doi":"10.1109/HKEDM.2002.1029150","DOIUrl":null,"url":null,"abstract":"The normalized process latitude (NPL) is used to assess the feasibility of 50-nm device manufacture by 157-nm optical lithography. A first NPL quantification assuming steady improvement of processing technology shows that 157-nm optical lithography is infeasible. A second NPL quantification investigates the amount of technology acceleration required to make 50-nm manufacture possible. It is concluded that photolithography is a viable lithography technique for the 50-nm technology generation only with significant improvements in focus control, photomask making, photoresist contrast, as well as aberration levels.","PeriodicalId":154545,"journal":{"name":"Proceedings 2002 IEEE Hong Kong Electron Devices Meeting (Cat. No.02TH8616)","volume":"84 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2002-11-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings 2002 IEEE Hong Kong Electron Devices Meeting (Cat. No.02TH8616)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/HKEDM.2002.1029150","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
The normalized process latitude (NPL) is used to assess the feasibility of 50-nm device manufacture by 157-nm optical lithography. A first NPL quantification assuming steady improvement of processing technology shows that 157-nm optical lithography is infeasible. A second NPL quantification investigates the amount of technology acceleration required to make 50-nm manufacture possible. It is concluded that photolithography is a viable lithography technique for the 50-nm technology generation only with significant improvements in focus control, photomask making, photoresist contrast, as well as aberration levels.