An L-band ultra low power consumption monolithic low noise amplifier [for mobile communication]

M. Nakatsugawa, Y. Yamaguchi, M. Muraguchi
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引用次数: 10

Abstract

A low-power-consumption variable-gain low noise amplifier (LNA) is developed. In order to achieve low noise, high gain, low distortion and low power consumption simultaneously, a cascode connection between an enhancement-mode GaAs MESFET (EFET) and a depletion-mode GaAs (DFET) is employed. The amplifier shows state-of-the-art performance with NF of 2.0 dB, gain of 12.2 dB and IP3 of 5.1 dBm at 1.9 GHz at power consumption of 2.0 mW, and NF of 2.4 dB, gain of 10.2 dB and IP3 of 2.7 dBm at 1 mW. Moreover, the LNA's gain is controllable according to the receiving level and it can be turned off while the transmitter is operating.<>
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一种l波段超低功耗单片低噪声放大器[用于移动通信]
研制了一种低功耗变增益低噪声放大器(LNA)。为了同时实现低噪声、高增益、低失真和低功耗,在增强模式GaAs MESFET (EFET)和耗尽模式GaAs (DFET)之间采用级联编码连接。该放大器表现出最先进的性能,在1.9 GHz时,功耗为2.0 mW, NF为2.0 dB,增益为12.2 dB, IP3为5.1 dBm;在1mw时,NF为2.4 dB,增益为10.2 dB, IP3为2.7 dBm。此外,LNA的增益是根据接收电平可控的,并且可以在发射机工作时关闭。
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