V. Hurm, W. Benz, W. Bronner, T. Fink, T. Jakobus, G. Kaufel, K. Kohler, Z. Lao, A. Leven, M. Ludwig, C. Moglestue, B. Raynor, J. Rosenzweig, M. Schlechtweg, A. Thiede, S. Weisser
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引用次数: 8
Abstract
1.3 - 1.55μm wavelength 20 Gbit/s MSM-HEMT and 10 Gbit/s PIN-HEMT photoreceivers have been monolithically integrated on GaAs substrates using a 0.3 μm gate length AlGaAs/GaAs HEMT process. The In/sub 0.53/Ga/sub 0.47/As MSM and PIN photodiodes grown on GaAs have nearly identical characteristics to photodiodes grown on InP.
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