On Stability Analysis and Loop Oscillation of Multi-Finger GaN FET Cells for High Power Amplifiers

A. Issaoun, P. Hammes, M. Fagerlind, F. Chai, T. Roedle
{"title":"On Stability Analysis and Loop Oscillation of Multi-Finger GaN FET Cells for High Power Amplifiers","authors":"A. Issaoun, P. Hammes, M. Fagerlind, F. Chai, T. Roedle","doi":"10.23919/EUMIC.2018.8539867","DOIUrl":null,"url":null,"abstract":"Highly optimized multi-finger GaN HEMT's are prone to internal oscillations or odd-modes. Developing tools to detect and suppress these oscillations is of great help for GaN device designers. This manuscript proposes an internal oscillations detection technique based on a FET small-signal equivalent circuit coupled to Electromagnetic (EM) simulations. Then, a stability analysis technique is applied on the developed transfer function. The approach is demonstrated on three 8-finger cells using three different stability analysis techniques. All outcomes of the used stability techniques align which proves the accuracy of the developed approach.","PeriodicalId":248339,"journal":{"name":"2018 13th European Microwave Integrated Circuits Conference (EuMIC)","volume":"111 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2018-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 13th European Microwave Integrated Circuits Conference (EuMIC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.23919/EUMIC.2018.8539867","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2

Abstract

Highly optimized multi-finger GaN HEMT's are prone to internal oscillations or odd-modes. Developing tools to detect and suppress these oscillations is of great help for GaN device designers. This manuscript proposes an internal oscillations detection technique based on a FET small-signal equivalent circuit coupled to Electromagnetic (EM) simulations. Then, a stability analysis technique is applied on the developed transfer function. The approach is demonstrated on three 8-finger cells using three different stability analysis techniques. All outcomes of the used stability techniques align which proves the accuracy of the developed approach.
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大功率放大器用多指氮化镓场效应晶体管的稳定性分析及回路振荡
高度优化的多指GaN HEMT容易出现内部振荡或奇模。开发工具来检测和抑制这些振荡对GaN器件设计人员有很大的帮助。本文提出了一种基于场效应管小信号等效电路耦合电磁仿真的内振荡检测技术。然后,将稳定性分析技术应用于所建立的传递函数。该方法使用三种不同的稳定性分析技术在三个8指细胞上进行了演示。所使用的稳定性技术的所有结果都一致,证明了所开发方法的准确性。
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