MSIM2: mixed-signal short channel IGFET model for circuit simulations

Abstract

MSIM2 is a physical compact model specifically developed for mixed-signal and analog-intensive circuit simulations in deep sub-micron CMOS technologies. MSIM2 separates the drift and diffusion current components as continuous functions in all all operating regions, and shows superior accuracy and continuity in the subthreshold and moderate inversion regions even for second-order derivatives. It has full temperature scalability (-55/spl deg/C to 150/spl deg/C) and geometry scalability (down to 0.25 /spl mu/m in W and L), and uses less parameters than other advanced models. MSIM2 also includes scalable charge and noise models, and has been verified against various processes from around the world.