A. Magnani, V. d’Alessandro, L. Codecasa, P. Zampardi, B. Moser, N. Rinaldi
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引用次数: 23
Abstract
This work is focused on the analysis of the dynamic thermal behavior of advanced GaAs HBTs, with particular emphasis on BiFET technologies, where pHEMTs are integrated below the conventional bipolar device. A novel highly-efficient tool is employed to determine the influence on the thermal impedance of the key layout and technology features, namely, size of the emitter and base-collector mesa, pHEMT layers, and metallization architecture. The tool relies on the multi-point moment matching algorithm, and allows CPU time and memory storage much lower than those required by commercially-available numerical software packages.
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