Exchange bias study of CoFeB/IrMn antidot and nanodot arrays fabricated by nanosphere lithography

X. Li, C. Leung, K. Lin, M. Chan, P. Pong
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Abstract

Exchange bias effect in nanostructures are widely investigated for applications in nanometric spintronic sensors. In this work, nanosphere lithography was adopted to pattern CoFeB/IrMn antidot and nanodot arrays. The exchange bias and coercivity of the nanostructures and continuous films exhibit similar exponential dependence on CoFeB layer thickness. High temperature annealing results in decreased exchange bias and coercivity. This work provides physical insights on magnetization reversal response in nanosized spintronic devices.
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纳米球光刻技术制备CoFeB/IrMn反点和纳米点阵列的交换偏置研究
纳米结构中的交换偏置效应在纳米自旋电子传感器中的应用得到了广泛的研究。本文采用纳米球光刻技术对CoFeB/IrMn反点和纳米点阵列进行了制模。纳米结构和连续膜的交换偏置和矫顽力随CoFeB层厚度呈指数依赖性。高温退火降低了交换偏置和矫顽力。这项工作为纳米自旋电子器件的磁化反转响应提供了物理见解。
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