Monte Carlo Simulation of GaSb Cluster Formation on Si(111) substrate

Abstract

Simulation of GaSb crystal formation on silicon substrate according to solid phase epitaxy was carried out using a kinetic lattice Monte Carlo model. Dependence of nanocrystal morphology and density was demonstrated to be dependent on gallium/antimony flux ration and on Si(Ill) substrate pretreatment. Formation of liquid gallium droplets on the surface during annealing stage is predicted by simulation. For GaSb crystal formation6 it was necessary either a noticeable excess of the deposited antimony flux over the gallium flux at the first stage of solid phase epitaxy, or preliminary deposition of antimony on the silicon substrate.