A 2.2 GHz CMOS VCO with inductive degeneration noise suppression

Proceedings of the IEEE 2001 Custom Integrated Circuits Conference (Cat. No.01CH37169) Pub Date : 2001-05-09 DOI:10.1109/CICC.2001.929754

P. Andreani, H. Sjöland

引用次数: 50

Abstract

A 1.4 V, 9 mA monolithic LC-tank voltage-controlled oscillator (VCO) fabricated in a standard 0.35 /spl mu/m CMOS process is presented. The VCO is tunable between 2.0 GHz and 2.37 GHz, and displays a phase noise between -140 dBc/Hz and -138 dBc/Hz at a 3 MHz offset frequency across the whole tuning range. This low phase noise is achieved through the use of an on-chip LC filter and an off-chip low frequency inductor, which totally remove the noise of the tail current source. The phase noise improvement due to the off-chip inductor is between 2 dB and 6 dB, increasing with higher oscillation frequencies.

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一种具有电感退化噪声抑制的2.2 GHz CMOS压控振荡器

介绍了一种1.4 V, 9 mA单片LC-tank压控振荡器(VCO)，该振荡器采用标准的0.35 /spl mu/m CMOS工艺制造。VCO在2.0 GHz和2.37 GHz之间可调，并在整个调谐范围内以3mhz偏移频率显示-140 dBc/Hz和-138 dBc/Hz之间的相位噪声。这种低相位噪声是通过使用片上LC滤波器和片外低频电感来实现的，完全消除了尾电流源的噪声。由于片外电感的相位噪声改善在2 ~ 6 dB之间，随着振荡频率的增加而增加。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Proceedings of the IEEE 2001 Custom Integrated Circuits Conference (Cat. No.01CH37169)

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