{"title":"Diamond AFM probe with piezoelectric sensor and actuator","authors":"T. Shibata, K. Unno, E. Makino","doi":"10.1109/SENSOR.2003.1215363","DOIUrl":null,"url":null,"abstract":"In order to develop a diamond AFM probe with a piezoelectric sensor and actuator, we fabricated lead zirconate titanate (PZT) thin film on a diamond thin film substrate and examined its piezoelectric properties. The PZT thin film was sputtered at room temperature and then annealed in a nitrogen (N/sub 2/) ambient to obtain a perovskite structure. On diamond thin film substrates, the value of piezoelectric constant, d/sub 31/, was as low as about -20 pC/N due to rough surface of the diamond film. After a poling treatment, however, its piezoelectric constant improved to about -65 pC/N. For realization of a PZT sensor and actuator on a diamond cantilever, the PZT thin film was also successfully patterned by reactive ion etching (RIE) in SF/sub 6/ plasma using a Pt upper electrode layer as an etching mask without any damage on a diamond layer. Based on the fabrication and patterning of PZT thin film together with microfabrication techniques of CVD diamond film, we demonstrate the diamond AFM probe of 150 /spl mu/m in length, 50 /spl mu/m in width and 5 /spl mu/m in thickness with a PZT sensor and actuator of 1 /spl mu/m in thickness. The resolution of image sensing and actuation force were estimated to be about 0.4 nm at a resolution of charge measurement of 1/spl times/10/sup -15/ C and 12 /spl mu/N at an applied voltage of 8 V, respectively.","PeriodicalId":196104,"journal":{"name":"TRANSDUCERS '03. 12th International Conference on Solid-State Sensors, Actuators and Microsystems. Digest of Technical Papers (Cat. No.03TH8664)","volume":"8 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2003-06-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"TRANSDUCERS '03. 12th International Conference on Solid-State Sensors, Actuators and Microsystems. Digest of Technical Papers (Cat. No.03TH8664)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SENSOR.2003.1215363","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2

Abstract

In order to develop a diamond AFM probe with a piezoelectric sensor and actuator, we fabricated lead zirconate titanate (PZT) thin film on a diamond thin film substrate and examined its piezoelectric properties. The PZT thin film was sputtered at room temperature and then annealed in a nitrogen (N/sub 2/) ambient to obtain a perovskite structure. On diamond thin film substrates, the value of piezoelectric constant, d/sub 31/, was as low as about -20 pC/N due to rough surface of the diamond film. After a poling treatment, however, its piezoelectric constant improved to about -65 pC/N. For realization of a PZT sensor and actuator on a diamond cantilever, the PZT thin film was also successfully patterned by reactive ion etching (RIE) in SF/sub 6/ plasma using a Pt upper electrode layer as an etching mask without any damage on a diamond layer. Based on the fabrication and patterning of PZT thin film together with microfabrication techniques of CVD diamond film, we demonstrate the diamond AFM probe of 150 /spl mu/m in length, 50 /spl mu/m in width and 5 /spl mu/m in thickness with a PZT sensor and actuator of 1 /spl mu/m in thickness. The resolution of image sensing and actuation force were estimated to be about 0.4 nm at a resolution of charge measurement of 1/spl times/10/sup -15/ C and 12 /spl mu/N at an applied voltage of 8 V, respectively.
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带有压电传感器和驱动器的金刚石AFM探针
为了研制一种具有压电传感器和致动器的金刚石AFM探针,在金刚石薄膜衬底上制备了锆钛酸铅薄膜,并对其压电性能进行了测试。在室温下溅射PZT薄膜,然后在氮(N/sub 2/)环境中退火,得到钙钛矿结构。在金刚石薄膜衬底上,由于金刚石薄膜表面粗糙,压电常数d/sub 31/低至-20 pC/N左右。经极化处理后,其压电常数提高到-65 pC/N左右。为了在金刚石悬臂梁上实现PZT传感器和致动器,在SF/sub - 6/等离子体中,利用Pt上电极层作为蚀刻掩膜,成功地对PZT薄膜进行了反应离子蚀刻(RIE),而没有对金刚石层造成任何损伤。基于PZT薄膜的制备和图像化以及CVD金刚石薄膜的微加工技术,我们展示了长度为150 /spl μ m,宽度为50 /spl μ m,厚度为5 /spl μ m的金刚石AFM探针,其PZT传感器和执行器的厚度为1 /spl μ m。在8 V电压下,当电荷测量分辨率为1/spl倍/10/sup -15/ C和12 /spl mu/N时,图像传感和致动力的分辨率分别约为0.4 nm。
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