Device for Protecting High Frequency and High Data Rate Interface Applications in FinFET Process Technologies

Abstract

The relatively poor ESD robustness of many RF ports is a direct result of the performance degradation introduced by traditional ESD diodes. The later limits the amount of ESD protection that can be tolerated in RF applications. This paper introduces a ground-referenced low capacitance and highly linear Silicon Controlled Rectifiers (SCR) topology designed in l6nm CMOS FinFET process technology. The device presented in this work is employed to protect RF ports with asymmetrical signal swings in the range of + 3.0V /-l.0V operating to 20 GHz with a 3rd order linearity specification requirement of −75dBc or greater.