Parasitic Extraction and Performance Assessment using Experimental Analysis of rGO Interconnects for PCB Designs

2021 8th International Conference on Signal Processing and Integrated Networks (SPIN) Pub Date : 2021-08-26 DOI:10.1109/SPIN52536.2021.9566006

Vishank Makhe, Vinay S. Palaparthy, Yash Agrawal

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Abstract

In this paper, novel reduced graphene oxide (rGO) interconnects for printed circuit boards (PCBs) designs are investigated using experimental analysis. rGO is a newly investigated and prominent material owing to its good electrical, thermal, mechanical and chemical properties. The prospective rGO is benchmarked with respect to conventional copper (Cu) based interconnects. Multiple interconnect device samples are fabricated physically by using FR4 copper clad for the analysis. The current-voltage (I-V) characteristics of these rGO and Cu interconnects are observed for linearity. The parasitic extraction of these interconnects is carried out using inductance-capacitance-resistance (LCR) meter. The characteristics of parasitic elements with respect to varying frequency range from 100 Hz to 10 MHz has been determined and analyzed in detail with the help of LCR meter. The attenuation and slew rate performance parameters are also determined with the help of digital storage oscilloscope (DSO).

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基于实验分析的PCB设计中rGO互连的寄生提取和性能评估

本文通过实验分析研究了用于印刷电路板设计的新型还原氧化石墨烯(rGO)互连。氧化石墨烯具有良好的电学、热学、力学和化学性能，是一种新兴的突出材料。未来的rGO是相对于传统的铜(Cu)基互连的基准。采用FR4铜包层物理制备多个互连器件样品进行分析。这些rGO和Cu互连的电流-电压(I-V)特性被观察到线性。利用电感-电容-电阻(LCR)计对这些互连进行寄生提取。利用LCR计对寄生元件在100hz ~ 10mhz范围内的特性进行了详细的测定和分析。在数字存储示波器(DSO)的帮助下，确定了衰减和摆率性能参数。

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2021 8th International Conference on Signal Processing and Integrated Networks (SPIN)

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