P. Gurník, P. Beno, R. Srnánek, M. Tlaczala, B. Ściana, L. Harmatha
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Abstract
The resolution of the capacitance-voltage (C-V) technique on single- and double-delta (/spl delta/)-doped GaAs is shown to be given by the breadth of dopant distribution. The experimental C-V profiles demonstrate that impurities are spatially localized on the length scale of the lattice constant. The sharp distribution of dopants is assessed by the secondary-ion mass spectroscopy.
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