{"title":"The sources of erase voltage variability in split-gate flash memory cell arrays","authors":"Y. Tkachev, J. Walls","doi":"10.1109/IIRW.2016.7904890","DOIUrl":null,"url":null,"abstract":"We performed a comprehensive analysis of the voltage-to-erase (Verase) distribution in split-gate flash memory cell arrays. It was shown that Verase distribution is mostly determined by the tunneling voltage variations. Other factors, such as distributions of coupling ratio and FG channel parameters, have a minor effect on Verase variability.","PeriodicalId":436183,"journal":{"name":"2016 IEEE International Integrated Reliability Workshop (IIRW)","volume":"105 ","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 IEEE International Integrated Reliability Workshop (IIRW)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IIRW.2016.7904890","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2
Abstract
We performed a comprehensive analysis of the voltage-to-erase (Verase) distribution in split-gate flash memory cell arrays. It was shown that Verase distribution is mostly determined by the tunneling voltage variations. Other factors, such as distributions of coupling ratio and FG channel parameters, have a minor effect on Verase variability.
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