D. Nouguier, C. Ndiaye, G. Ghibaudo, X. Federspiel, M. Rafik, D. Roy
{"title":"Improved analysis of NBTI relaxation behavior based on fast I–V measurement","authors":"D. Nouguier, C. Ndiaye, G. Ghibaudo, X. Federspiel, M. Rafik, D. Roy","doi":"10.1109/IIRW.2016.7904908","DOIUrl":null,"url":null,"abstract":"In this paper, we propose a qualitative analysis of NBTI recoverable components measured on pFET devices issued from various ST Microelectronics (28nm FDSOI technology and 40nm SION or Bulk) technologies. NBTI degradation and recovery resulting from DC stress are measured at µs time scale. We observed similarities between temperature and Vgrecovery dependencies on NBTI relaxation of SiON and FDSOI technologies. Then, we discuss the nature of one defect type responsible for the NBTI at early stage of relaxation.","PeriodicalId":436183,"journal":{"name":"2016 IEEE International Integrated Reliability Workshop (IIRW)","volume":"8 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2016-10-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 IEEE International Integrated Reliability Workshop (IIRW)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IIRW.2016.7904908","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 3
Abstract
In this paper, we propose a qualitative analysis of NBTI recoverable components measured on pFET devices issued from various ST Microelectronics (28nm FDSOI technology and 40nm SION or Bulk) technologies. NBTI degradation and recovery resulting from DC stress are measured at µs time scale. We observed similarities between temperature and Vgrecovery dependencies on NBTI relaxation of SiON and FDSOI technologies. Then, we discuss the nature of one defect type responsible for the NBTI at early stage of relaxation.
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
