{"title":"Device Modeling of Graded III-N HEMTs for Improved Linearity","authors":"M. Ancona, J. Calame, D. Meyer, S. Rajan","doi":"10.1109/SISPAD.2018.8551700","DOIUrl":null,"url":null,"abstract":"When GaN HEMTs are used in power amplifier applications, their performance falls well short of ideal due to power-gain roll-off that results from having a peaked transconductance characteristic. A promising design solution involves compositionally grading the channel, and we here formulate a numerical device model to explore this approach that couples linear electroelasticity, diffusion-drift transport with new mobility models, and density-gradient theory. Lumped modeling of the large-signal behavior is also developed to explore the power amplifier performance. Preliminary results presented here indicate that the graded-channel idea has value, especially for gate lengths greater than about 100nm.","PeriodicalId":170070,"journal":{"name":"2018 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","volume":"835 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2018-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SISPAD.2018.8551700","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 4
Abstract
When GaN HEMTs are used in power amplifier applications, their performance falls well short of ideal due to power-gain roll-off that results from having a peaked transconductance characteristic. A promising design solution involves compositionally grading the channel, and we here formulate a numerical device model to explore this approach that couples linear electroelasticity, diffusion-drift transport with new mobility models, and density-gradient theory. Lumped modeling of the large-signal behavior is also developed to explore the power amplifier performance. Preliminary results presented here indicate that the graded-channel idea has value, especially for gate lengths greater than about 100nm.
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