{"title":"EMI characterization for power conversion circuit with SiC power devices","authors":"T. Ibuchi, T. Funaki","doi":"10.1109/ATS49688.2020.9301613","DOIUrl":null,"url":null,"abstract":"The fast switching characteristics of silicon carbide (SiC) power devices can be expected to realize low losses, light weight, and compact power converters. However, high dv/dt and di/dt during switching transients raise the concerns of electromagnetic interference (EMI) for high-power converters. This report focuses on the switching characteristics of SiC power devices, and discusses the relationship between their transient characteristics and EMI noise sources for power conversion circuit.","PeriodicalId":220508,"journal":{"name":"2020 IEEE 29th Asian Test Symposium (ATS)","volume":"134 ","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2020-11-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2020 IEEE 29th Asian Test Symposium (ATS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ATS49688.2020.9301613","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2
Abstract
The fast switching characteristics of silicon carbide (SiC) power devices can be expected to realize low losses, light weight, and compact power converters. However, high dv/dt and di/dt during switching transients raise the concerns of electromagnetic interference (EMI) for high-power converters. This report focuses on the switching characteristics of SiC power devices, and discusses the relationship between their transient characteristics and EMI noise sources for power conversion circuit.
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