S.C. Peacock, M.A. Stauffer, A.M. Van Slyke, E. Ferre-Pikal
{"title":"Study of flicker phase modulation and amplitude modulation noise in field effect transistor amplifiers","authors":"S.C. Peacock, M.A. Stauffer, A.M. Van Slyke, E. Ferre-Pikal","doi":"10.1109/FREQ.2001.956186","DOIUrl":null,"url":null,"abstract":"We present theoretical and experimental results on up-conversion of 1/f low-frequency noise into amplitude modulation (AM) noise and phase modulation (PM) noise in linear field-effect transistor (FET) amplifiers. Two types of transistors, used in a common source (CS) configuration, were studied: junction field-effect transistors (JFETs) and metal-semiconductor field-effect transistors (MESFETs). AM and PM sensitivities to baseband current and voltage noise are computed from theory and experimentally measured. A negative feedback technique that reduces the baseband noise is also investigated.","PeriodicalId":369101,"journal":{"name":"Proceedings of the 2001 IEEE International Frequncy Control Symposium and PDA Exhibition (Cat. No.01CH37218)","volume":"51 ","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2001-06-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the 2001 IEEE International Frequncy Control Symposium and PDA Exhibition (Cat. No.01CH37218)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/FREQ.2001.956186","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 5
Abstract
We present theoretical and experimental results on up-conversion of 1/f low-frequency noise into amplitude modulation (AM) noise and phase modulation (PM) noise in linear field-effect transistor (FET) amplifiers. Two types of transistors, used in a common source (CS) configuration, were studied: junction field-effect transistors (JFETs) and metal-semiconductor field-effect transistors (MESFETs). AM and PM sensitivities to baseband current and voltage noise are computed from theory and experimentally measured. A negative feedback technique that reduces the baseband noise is also investigated.