Pub Date : 2001-06-08DOI: 10.1109/FREQ.2001.956209
J.J. Martin, A. R. Lopez
The Q of a crystal is limited by several different mechanisms including the properties of the quartz itself. In as-grown quartz at high temperatures the alkali ions associated with the substitutional aluminum thermally escape from their interstitial site and drift in the Z-axis channel. These free ions cause a thermally activated loss. In swept quartz the alkali ions have been replaced with hydrogen which bonds to one of the oxygen atoms adjacent to the aluminum. The resulting Al-OH center causes a traditional loss peak at about 600 K in 5 MHz crystals. We are in the process of comparing the Li/sup +/ and Na/sup +/ free ionloss and the Al-OH loss in AT-cut, BT-cut, and SC-cut resonators. The comparison is being made between 5 MHz 3rd blanks taken from a single bar of Toyo SQ-grade quartz that has 8-10 ppm aluminum. AT-cut and BT-cut 10 MHz 3rd crystals from single bar of Motorola quartz with 10-12 ppm aluminum are also included in the study. The original blanks were electrodiffused with the Li/sup +/, Na/sup +/ or with hydrogen to ensure presence only. one species of ion. The free-ion loss due to Li/sup +/ is consistently greater than that due to Na+. In the 5 MHz crystals the free-ion loss is greater for the AT-cuts, than for the BT-cuts, then for the SC-cuts (c-mode) for both Li/sup +/ and Na/sup +/. The expected 50% frequency-related reduction in the free-ion loss was observed for the 10 MHz BT-cut crystals. However, the reduction was significantly larger for the AT-cut 10 MHz crystals. SC-cut crystals are normally operated on the slow c-mode but can be run on the faster b-mode. Both the Li/sup +/ and Na/sup +/ free-ion loss for the b-mode appears to be nearly the same as for the c-mode. The AT-cut blank showed the largest 600 K Al-OH loss peak, the SC-cut (c-mode) was the next largest, followed by the BT-cut, and the SC-cut (b-mode) was the smallest.
{"title":"High-temperature acoustic loss in. AT-cut, BT-cut and SC-cut quartz resonators","authors":"J.J. Martin, A. R. Lopez","doi":"10.1109/FREQ.2001.956209","DOIUrl":"https://doi.org/10.1109/FREQ.2001.956209","url":null,"abstract":"The Q of a crystal is limited by several different mechanisms including the properties of the quartz itself. In as-grown quartz at high temperatures the alkali ions associated with the substitutional aluminum thermally escape from their interstitial site and drift in the Z-axis channel. These free ions cause a thermally activated loss. In swept quartz the alkali ions have been replaced with hydrogen which bonds to one of the oxygen atoms adjacent to the aluminum. The resulting Al-OH center causes a traditional loss peak at about 600 K in 5 MHz crystals. We are in the process of comparing the Li/sup +/ and Na/sup +/ free ionloss and the Al-OH loss in AT-cut, BT-cut, and SC-cut resonators. The comparison is being made between 5 MHz 3rd blanks taken from a single bar of Toyo SQ-grade quartz that has 8-10 ppm aluminum. AT-cut and BT-cut 10 MHz 3rd crystals from single bar of Motorola quartz with 10-12 ppm aluminum are also included in the study. The original blanks were electrodiffused with the Li/sup +/, Na/sup +/ or with hydrogen to ensure presence only. one species of ion. The free-ion loss due to Li/sup +/ is consistently greater than that due to Na+. In the 5 MHz crystals the free-ion loss is greater for the AT-cuts, than for the BT-cuts, then for the SC-cuts (c-mode) for both Li/sup +/ and Na/sup +/. The expected 50% frequency-related reduction in the free-ion loss was observed for the 10 MHz BT-cut crystals. However, the reduction was significantly larger for the AT-cut 10 MHz crystals. SC-cut crystals are normally operated on the slow c-mode but can be run on the faster b-mode. Both the Li/sup +/ and Na/sup +/ free-ion loss for the b-mode appears to be nearly the same as for the c-mode. The AT-cut blank showed the largest 600 K Al-OH loss peak, the SC-cut (c-mode) was the next largest, followed by the BT-cut, and the SC-cut (b-mode) was the smallest.","PeriodicalId":369101,"journal":{"name":"Proceedings of the 2001 IEEE International Frequncy Control Symposium and PDA Exhibition (Cat. No.01CH37218)","volume":"38 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-06-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124954310","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2001-06-08DOI: 10.1109/FREQ.2001.956375
M. Addouche, N. Ratier, D. Gillet, R. Brendel, F. Lardet-Vieudrin, J. Delporte
This paper presents the actual state of a computer program especially designed to simulate the behavior of quartz crystal oscillators. The program is based on the fact that the current through the quartz crystal is almost perfectly sinusoidal. Consequently the oscillator can be modeled by a resonator across a nonlinear impedance that depends only on the current magnitude through it. The resonator being replaced by a current source, the nonlinear impedance of the amplifier is computed from a series of transient analyses performed at the resonator frequency. When the steady state is reached, the resonator impedance is exactly equal and of opposite sign to the amplifier impedance. This identity allows one to compute the oscillation amplitude and the frequency shift with respect to the resonator frequency. This computation does not require to perform unacceptable long transient analyses in case of high-Q oscillator. Our program is intended to help the designer in checking or improving oscillator circuit design. From the Spice netlist, it enables the user to compute the steady state features of the oscillator, namely frequency and amplitude. Then, the user can study the effect of temperature change on any components or the influence of quartz characteristic. It is also possible to perform accurate oscillator sensitivity calculation to various parameters (component value, supply voltage, ...) as well as worst case analysis.
{"title":"ADOQ: a quartz crystal oscillator simulation software","authors":"M. Addouche, N. Ratier, D. Gillet, R. Brendel, F. Lardet-Vieudrin, J. Delporte","doi":"10.1109/FREQ.2001.956375","DOIUrl":"https://doi.org/10.1109/FREQ.2001.956375","url":null,"abstract":"This paper presents the actual state of a computer program especially designed to simulate the behavior of quartz crystal oscillators. The program is based on the fact that the current through the quartz crystal is almost perfectly sinusoidal. Consequently the oscillator can be modeled by a resonator across a nonlinear impedance that depends only on the current magnitude through it. The resonator being replaced by a current source, the nonlinear impedance of the amplifier is computed from a series of transient analyses performed at the resonator frequency. When the steady state is reached, the resonator impedance is exactly equal and of opposite sign to the amplifier impedance. This identity allows one to compute the oscillation amplitude and the frequency shift with respect to the resonator frequency. This computation does not require to perform unacceptable long transient analyses in case of high-Q oscillator. Our program is intended to help the designer in checking or improving oscillator circuit design. From the Spice netlist, it enables the user to compute the steady state features of the oscillator, namely frequency and amplitude. Then, the user can study the effect of temperature change on any components or the influence of quartz characteristic. It is also possible to perform accurate oscillator sensitivity calculation to various parameters (component value, supply voltage, ...) as well as worst case analysis.","PeriodicalId":369101,"journal":{"name":"Proceedings of the 2001 IEEE International Frequncy Control Symposium and PDA Exhibition (Cat. No.01CH37218)","volume":"1165 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-06-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134525835","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2001-06-08DOI: 10.1109/FREQ.2001.956186
S.C. Peacock, M.A. Stauffer, A.M. Van Slyke, E. Ferre-Pikal
We present theoretical and experimental results on up-conversion of 1/f low-frequency noise into amplitude modulation (AM) noise and phase modulation (PM) noise in linear field-effect transistor (FET) amplifiers. Two types of transistors, used in a common source (CS) configuration, were studied: junction field-effect transistors (JFETs) and metal-semiconductor field-effect transistors (MESFETs). AM and PM sensitivities to baseband current and voltage noise are computed from theory and experimentally measured. A negative feedback technique that reduces the baseband noise is also investigated.
{"title":"Study of flicker phase modulation and amplitude modulation noise in field effect transistor amplifiers","authors":"S.C. Peacock, M.A. Stauffer, A.M. Van Slyke, E. Ferre-Pikal","doi":"10.1109/FREQ.2001.956186","DOIUrl":"https://doi.org/10.1109/FREQ.2001.956186","url":null,"abstract":"We present theoretical and experimental results on up-conversion of 1/f low-frequency noise into amplitude modulation (AM) noise and phase modulation (PM) noise in linear field-effect transistor (FET) amplifiers. Two types of transistors, used in a common source (CS) configuration, were studied: junction field-effect transistors (JFETs) and metal-semiconductor field-effect transistors (MESFETs). AM and PM sensitivities to baseband current and voltage noise are computed from theory and experimentally measured. A negative feedback technique that reduces the baseband noise is also investigated.","PeriodicalId":369101,"journal":{"name":"Proceedings of the 2001 IEEE International Frequncy Control Symposium and PDA Exhibition (Cat. No.01CH37218)","volume":"51 ","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-06-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"120880414","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2001-06-08DOI: 10.1109/FREQ.2001.956151
C. Stephens
Clocks and watches stand at an important crossroads where science, technology and society intersect. Changes in timekeeping technology, beginning with the invention of the mechanical clock around AD 1300, have influenced the character of scientific observation, aided the development of other machine technologies and brought significant revisions to the way people think about and behave in time. One of the most recent episodes in this long history is the invention of the electronic wristwatch. What follows is a brief summary of a larger work in progress. This preview introduces the engineers who completely reinvented the wristwatch with all new electronic components thirty years ago, considers the contexts in which they worked, and analyzes consumer reception, especially the lively public debate over the comparative benefits of digital versus analog watch displays.
{"title":"Engineering time: inventing the quartz wristwatch","authors":"C. Stephens","doi":"10.1109/FREQ.2001.956151","DOIUrl":"https://doi.org/10.1109/FREQ.2001.956151","url":null,"abstract":"Clocks and watches stand at an important crossroads where science, technology and society intersect. Changes in timekeeping technology, beginning with the invention of the mechanical clock around AD 1300, have influenced the character of scientific observation, aided the development of other machine technologies and brought significant revisions to the way people think about and behave in time. One of the most recent episodes in this long history is the invention of the electronic wristwatch. What follows is a brief summary of a larger work in progress. This preview introduces the engineers who completely reinvented the wristwatch with all new electronic components thirty years ago, considers the contexts in which they worked, and analyzes consumer reception, especially the lively public debate over the comparative benefits of digital versus analog watch displays.","PeriodicalId":369101,"journal":{"name":"Proceedings of the 2001 IEEE International Frequncy Control Symposium and PDA Exhibition (Cat. No.01CH37218)","volume":"19 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-06-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131406800","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2001-06-08DOI: 10.1109/FREQ.2001.956240
E. E. Carlson, T.E. Wickard
One of the largest problems affecting crystal manufacturers today is the mass production and testing of low noise crystals. It has been reported in these proceedings that an effective way to predict the phase noise of a crystal in production is to use the Drive Level Dependence (DLD) phenomena that many crystals exhibit. It has been shown that there is a positive correlation between the slope of the crystal resistance over increasing drive level and the noise that the crystal exhibits. This leads us to believe that by reducing the DLD of a crystal resonator, we could reduce the resulting phase noise. One of the causes of the DLD phenomenon is thought to be contaminants on the surface of the crystal. This paper provides data from a large sample size of 100,000 MHz crystals examining the correlation between DID and phase noise. A variety of crystal packages and frequencies are examined for the effect of known contaminants on DLD and phase noise performance. Additionally, the correlation of DLD measurements using other measurement techniques is examined. The research shows that DLD may not be the most effective method of screening for short-term stability in a variety of crystal packages.
{"title":"A study on the measured correlation of drive level dependency and phase noise of quartz crystal resonators","authors":"E. E. Carlson, T.E. Wickard","doi":"10.1109/FREQ.2001.956240","DOIUrl":"https://doi.org/10.1109/FREQ.2001.956240","url":null,"abstract":"One of the largest problems affecting crystal manufacturers today is the mass production and testing of low noise crystals. It has been reported in these proceedings that an effective way to predict the phase noise of a crystal in production is to use the Drive Level Dependence (DLD) phenomena that many crystals exhibit. It has been shown that there is a positive correlation between the slope of the crystal resistance over increasing drive level and the noise that the crystal exhibits. This leads us to believe that by reducing the DLD of a crystal resonator, we could reduce the resulting phase noise. One of the causes of the DLD phenomenon is thought to be contaminants on the surface of the crystal. This paper provides data from a large sample size of 100,000 MHz crystals examining the correlation between DID and phase noise. A variety of crystal packages and frequencies are examined for the effect of known contaminants on DLD and phase noise performance. Additionally, the correlation of DLD measurements using other measurement techniques is examined. The research shows that DLD may not be the most effective method of screening for short-term stability in a variety of crystal packages.","PeriodicalId":369101,"journal":{"name":"Proceedings of the 2001 IEEE International Frequncy Control Symposium and PDA Exhibition (Cat. No.01CH37218)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-06-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132322498","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2001-06-08DOI: 10.1109/FREQ.2001.956373
K. Nemoto, Kimiaki Sato
A fully integrated CMOS analog TCXO IC that is suitable for cellular phone and other applications is presented. It was designed in a 1.0 /spl mu/m CMOS process with an embedded EEPROM and operates from 2.5 V to 5.5 V supply voltage and consumes 1.1 mA at a 3.0 V supply voltage. The chip area is 2.38/spl times/1.93 mm/sup 2/. The temperature stability is better than /spl plusmn/2.5 ppm over -30 to 85/spl deg/C. Measured phase noise is -115 dBc/Hz and -135 dBc/Hz at 100 Hz and 1 kHz offset, respectively.
{"title":"A 2.5 ppm fully integrated CMOS analog TCXO","authors":"K. Nemoto, Kimiaki Sato","doi":"10.1109/FREQ.2001.956373","DOIUrl":"https://doi.org/10.1109/FREQ.2001.956373","url":null,"abstract":"A fully integrated CMOS analog TCXO IC that is suitable for cellular phone and other applications is presented. It was designed in a 1.0 /spl mu/m CMOS process with an embedded EEPROM and operates from 2.5 V to 5.5 V supply voltage and consumes 1.1 mA at a 3.0 V supply voltage. The chip area is 2.38/spl times/1.93 mm/sup 2/. The temperature stability is better than /spl plusmn/2.5 ppm over -30 to 85/spl deg/C. Measured phase noise is -115 dBc/Hz and -135 dBc/Hz at 100 Hz and 1 kHz offset, respectively.","PeriodicalId":369101,"journal":{"name":"Proceedings of the 2001 IEEE International Frequncy Control Symposium and PDA Exhibition (Cat. No.01CH37218)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-06-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127705465","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2001-06-08DOI: 10.1109/FREQ.2001.956337
R. Lucklum, P. Hauptmann, R. Cernosek
Quartz crystal resonator sensors can be employed for the determination of properties of thin films prepared on their surfaces. If the sensor provides both the frequency shift and the motional resistance in its response, more information can be extracted than using the traditional quartz crystal microbalance. The acoustic load concept allows the direct calculation of material parameter values directly from measured responses and (assumed) film properties. The computations can be easier and faster compared with experiments using the complete impedance analysis. The accuracy of the model is sufficient for most applications. Some film properties are not covered by the one-dimensional transmission line model. Under certain circumstances a generalization of the one-dimensional film parameters can be applied to describe those effects. Although the parameters lose part of their original meaning, it can be a helpful way to predict the effect on the (generalized) acoustic load and hence the sensor response.
{"title":"Thin film material properties analysis with quartz crystal resonators","authors":"R. Lucklum, P. Hauptmann, R. Cernosek","doi":"10.1109/FREQ.2001.956337","DOIUrl":"https://doi.org/10.1109/FREQ.2001.956337","url":null,"abstract":"Quartz crystal resonator sensors can be employed for the determination of properties of thin films prepared on their surfaces. If the sensor provides both the frequency shift and the motional resistance in its response, more information can be extracted than using the traditional quartz crystal microbalance. The acoustic load concept allows the direct calculation of material parameter values directly from measured responses and (assumed) film properties. The computations can be easier and faster compared with experiments using the complete impedance analysis. The accuracy of the model is sufficient for most applications. Some film properties are not covered by the one-dimensional transmission line model. Under certain circumstances a generalization of the one-dimensional film parameters can be applied to describe those effects. Although the parameters lose part of their original meaning, it can be a helpful way to predict the effect on the (generalized) acoustic load and hence the sensor response.","PeriodicalId":369101,"journal":{"name":"Proceedings of the 2001 IEEE International Frequncy Control Symposium and PDA Exhibition (Cat. No.01CH37218)","volume":"125 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-06-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133725310","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2001-06-08DOI: 10.1109/FREQ.2001.956242
O. Vallin, Boo Einefors, C. Hedlund, G. Thornell
In contrast to other methods direct bonding allows for the joining of two materials without an intermediate layer as in soldering or gluing. Although often putting tremendous requirements on the surfaces to be joined in terms of cleanliness and smoothness - direct bonding generally provides extraordinary adhesion and stability. In the semiconductor industry the direct bonding of silicon has been successfully employed for many years. Recently we showed that the technology, with some modifications, could be applied also to single crystalline quartz, and that the direct bonding of quartz could be achieved with arbitrary cuts and in various directions. The ability to unite quartz wafers ultimately enables new resonator, filter, and sensor concepts, and the ability to bond pre-processed wafers make true all-quartz packages possible. In present work, we investigate the influence on a resonator by including a direct bonded interface.
{"title":"Direct bonded quartz resonators","authors":"O. Vallin, Boo Einefors, C. Hedlund, G. Thornell","doi":"10.1109/FREQ.2001.956242","DOIUrl":"https://doi.org/10.1109/FREQ.2001.956242","url":null,"abstract":"In contrast to other methods direct bonding allows for the joining of two materials without an intermediate layer as in soldering or gluing. Although often putting tremendous requirements on the surfaces to be joined in terms of cleanliness and smoothness - direct bonding generally provides extraordinary adhesion and stability. In the semiconductor industry the direct bonding of silicon has been successfully employed for many years. Recently we showed that the technology, with some modifications, could be applied also to single crystalline quartz, and that the direct bonding of quartz could be achieved with arbitrary cuts and in various directions. The ability to unite quartz wafers ultimately enables new resonator, filter, and sensor concepts, and the ability to bond pre-processed wafers make true all-quartz packages possible. In present work, we investigate the influence on a resonator by including a direct bonded interface.","PeriodicalId":369101,"journal":{"name":"Proceedings of the 2001 IEEE International Frequncy Control Symposium and PDA Exhibition (Cat. No.01CH37218)","volume":"24 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-06-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121482013","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2001-06-07DOI: 10.1109/FREQ.2001.956279
T. Nomura, A. Saitoh, T. Miyazaki
An edge-reflecting liquid SAW sensor probe based on the SH-SAW device and a tentative implementation system for the sensor probe has been proposed. Experiments using the 36/spl deg/YX LiTaO/sub 3/ substrate have shown that the SH-SAW wave, which is reflected at the perpendicular edge, attenuates in the liquid in proportion to the propagation length. Moreover, it has shown that the amplitude of the reflected wave at the interface between the liquid and the edge is proportional to the square root of the product of the viscosity and density of the liquid. It has also been shown that the grating wave-guide eliminates SSBW, thereby facilitating the measurement of the electrical characteristics. Finally, a tentative system configuration suitable for the reflecting SH-SAW sensor was proposed.
{"title":"Liquid sensor probe using complete reflection at free edge of shear horizontal mode surface acoustic wave","authors":"T. Nomura, A. Saitoh, T. Miyazaki","doi":"10.1109/FREQ.2001.956279","DOIUrl":"https://doi.org/10.1109/FREQ.2001.956279","url":null,"abstract":"An edge-reflecting liquid SAW sensor probe based on the SH-SAW device and a tentative implementation system for the sensor probe has been proposed. Experiments using the 36/spl deg/YX LiTaO/sub 3/ substrate have shown that the SH-SAW wave, which is reflected at the perpendicular edge, attenuates in the liquid in proportion to the propagation length. Moreover, it has shown that the amplitude of the reflected wave at the interface between the liquid and the edge is proportional to the square root of the product of the viscosity and density of the liquid. It has also been shown that the grating wave-guide eliminates SSBW, thereby facilitating the measurement of the electrical characteristics. Finally, a tentative system configuration suitable for the reflecting SH-SAW sensor was proposed.","PeriodicalId":369101,"journal":{"name":"Proceedings of the 2001 IEEE International Frequncy Control Symposium and PDA Exhibition (Cat. No.01CH37218)","volume":"11 2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-06-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121233774","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2001-06-07DOI: 10.1109/FREQ.2001.956171
W. Klipstein, D. Seidel, J. A. White, B. Young
We. have begun constructing all-solid-state laser systems at 778 nm and at 532 nm in support of a satellite-based gravity-mapping mission tentatively planned to fly in 2007. In each case the lasers will be stabilized at short times to high-finesse Fabry-Perot cavities. At longer times the 778 nm laser will be stabilized to the 2-photon transition in rubidium.. In the 532 nm system, a frequency-doubled Nd:YAG laser with a non-planar ring oscillator (NPRO) design will be frequency-locked to a molecular iodine line. We intend to combine the exquisite performance over short time scales coming from a cavity reference with the long-term stability of an atomic frequency standard with an eye towards reliability in a spaceflight. application. By developing. two separate candidate systems with proven performance we intend to maximize the probability of success for this mission-critical system development.
{"title":"Optical frequency standard development in support of NASA's gravity-mapping missions","authors":"W. Klipstein, D. Seidel, J. A. White, B. Young","doi":"10.1109/FREQ.2001.956171","DOIUrl":"https://doi.org/10.1109/FREQ.2001.956171","url":null,"abstract":"We. have begun constructing all-solid-state laser systems at 778 nm and at 532 nm in support of a satellite-based gravity-mapping mission tentatively planned to fly in 2007. In each case the lasers will be stabilized at short times to high-finesse Fabry-Perot cavities. At longer times the 778 nm laser will be stabilized to the 2-photon transition in rubidium.. In the 532 nm system, a frequency-doubled Nd:YAG laser with a non-planar ring oscillator (NPRO) design will be frequency-locked to a molecular iodine line. We intend to combine the exquisite performance over short time scales coming from a cavity reference with the long-term stability of an atomic frequency standard with an eye towards reliability in a spaceflight. application. By developing. two separate candidate systems with proven performance we intend to maximize the probability of success for this mission-critical system development.","PeriodicalId":369101,"journal":{"name":"Proceedings of the 2001 IEEE International Frequncy Control Symposium and PDA Exhibition (Cat. No.01CH37218)","volume":"150 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-06-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115311280","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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