Growth of substituted langasite-type Ca/sub 3/NbGa/sub 3/Si/sub 2/O/sub 14/ single crystals, and their dielectric, elastic and piezoelectric properties
{"title":"Growth of substituted langasite-type Ca/sub 3/NbGa/sub 3/Si/sub 2/O/sub 14/ single crystals, and their dielectric, elastic and piezoelectric properties","authors":"M. Adachi, T. Funakawa, T. Karaki","doi":"10.1109/ISAF.2002.1195955","DOIUrl":null,"url":null,"abstract":"It has been attempted to grow new langasite crystals. Ba/sub 3/Nb/sub 2/Ga/sub 4/O/sub 14/, Ba/sub 3/NbGa/sub 3/Si/sub 2/O/sub 14/ and Ba/sub 3/Nb/sub 0.5/Ga/sub 2.5/Si/sub 3/O/sub 14/ have been synthesized by solid state reaction and then grown by the Czochralski method. Among them, only Ba/sub 3/NbGa/sub 3/Si/sub 2/O/sub 14/ is a langasite structure and its melting temperature is 1260/spl deg/C. Growth of this crystal has been attempted, but a single phase Ba/sub 3/NbGa/sub 3/Si/sub 2/O/sub 14/ could not be grown because Ba ion is too large for A site in this system. Further, by substitution of Ba with Ca in Ba/sub 3/NbGa/sub 3/Si/sub 2/O/sub 14/, transparent and colorless Ca/sub 3/NbGa/sub 3/Si/sub 2/O/sub 14/ crystals have been successfully grown at the melting point of 1325/spl deg/C.","PeriodicalId":415725,"journal":{"name":"Proceedings of the 13th IEEE International Symposium on Applications of Ferroelectrics, 2002. ISAF 2002.","volume":"11 6","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2002-05-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the 13th IEEE International Symposium on Applications of Ferroelectrics, 2002. ISAF 2002.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISAF.2002.1195955","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
It has been attempted to grow new langasite crystals. Ba/sub 3/Nb/sub 2/Ga/sub 4/O/sub 14/, Ba/sub 3/NbGa/sub 3/Si/sub 2/O/sub 14/ and Ba/sub 3/Nb/sub 0.5/Ga/sub 2.5/Si/sub 3/O/sub 14/ have been synthesized by solid state reaction and then grown by the Czochralski method. Among them, only Ba/sub 3/NbGa/sub 3/Si/sub 2/O/sub 14/ is a langasite structure and its melting temperature is 1260/spl deg/C. Growth of this crystal has been attempted, but a single phase Ba/sub 3/NbGa/sub 3/Si/sub 2/O/sub 14/ could not be grown because Ba ion is too large for A site in this system. Further, by substitution of Ba with Ca in Ba/sub 3/NbGa/sub 3/Si/sub 2/O/sub 14/, transparent and colorless Ca/sub 3/NbGa/sub 3/Si/sub 2/O/sub 14/ crystals have been successfully grown at the melting point of 1325/spl deg/C.
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