NESS: new flexible Nano-Electronic Simulation Software

Abstract

In this paper, we present an integrated simulation environment called NESS that enables the modelling of nano CMOS transistors with different models and degrees of complexity. Thanks to its unified simulation domain for all solvers, NESS offers the possibility to consider confinement-aware band structures, generate different sources of variability and assess their impact on the figures of merit using different transport models. NESS is also a modular open-ended simulation environment that can be easily extended to include new modules such as nano-interconnects and a direct Boltzmann solver.