A V-band Differential Colpitts Push-Push VCO in 130 nm SiGe BiCMOS

Jiayang Yu, Jixin Chen, Debin Hou, P. Yan, Zhe Chen
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Abstract

A V-band push-push VCO operating from 68.5 GHz to 73 GHz is presented. This design introduces a capacitor at the common-base node, which enhances odd mode oscillation and maximizes the common-mode impedance of the differential oscillator. At the output end, a transformer is used to decouple both fundamental and 2nd harmonic frequency signals. The desired 2nd harmonic frequency signal is delivered to the output, whereas the fundamental frequency signal can be fed back for phase-detection in a phase-locked loop. The implemented VCO delivers a peak output power of 1.2 dBm at 72.5 GHz, and achieves a phase noise of -103 dBc/Hz at 1-MHz offset, respectively. The circuit is designed on a 130 nm SiGe BiCMOS technology with $f_{T}/f_{max}$ of 200/300 GHz. The total power consumption of the signal source is 50 mW with a supply voltage of 1.8 V.
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130 nm SiGe BiCMOS的v波段差分柯氏推推压控振荡器
提出了一种工作频率为68.5 GHz ~ 73 GHz的v波段推推式压控振荡器。本设计在共基节点引入电容,增强了差分振荡器的奇模振荡,使其共模阻抗最大化。在输出端,变压器用于对基频和二次谐波频率信号进行去耦。所需的二谐波频率信号被传递到输出端,而基频信号可以在锁相环中反馈进行相位检测。所实现的VCO在72.5 GHz时的峰值输出功率为1.2 dBm,在1 mhz偏移时的相位噪声分别为-103 dBc/Hz。该电路采用130 nm SiGe BiCMOS技术设计,f_{T}/f_{max}$为200/300 GHz。信号源的总功耗为50mw,电源电压为1.8 V。
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