{"title":"Anisotropy of current-voltage characteristics in PbSnTe:In film structures","authors":"V. S. Epov, A. Klimov, V. Shumsky","doi":"10.1109/EDM.2009.5173945","DOIUrl":null,"url":null,"abstract":"In the present work, we propose a model to describe the anisotropy of current-voltage characteristics in PbSnTe:In films at low temperatures under electron injection out of contacts. The model is developed considering the ferroelectric properties of PbSnTe:In. Data on the temperature dependence of the anisotropy are reported.","PeriodicalId":262499,"journal":{"name":"2009 International Conference and Seminar on Micro/Nanotechnologies and Electron Devices","volume":"14 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2009-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2009 International Conference and Seminar on Micro/Nanotechnologies and Electron Devices","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EDM.2009.5173945","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
In the present work, we propose a model to describe the anisotropy of current-voltage characteristics in PbSnTe:In films at low temperatures under electron injection out of contacts. The model is developed considering the ferroelectric properties of PbSnTe:In. Data on the temperature dependence of the anisotropy are reported.
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
