Statistical Models and Frequency-Dependent Corner Models for Passive Devices

N. Lu
{"title":"Statistical Models and Frequency-Dependent Corner Models for Passive Devices","authors":"N. Lu","doi":"10.1109/ISQED.2008.125","DOIUrl":null,"url":null,"abstract":"We present the statistical SPICE models and associated corner models of passive devices (such as capacitors and resistors) in VLSI semiconductor technologies. The capacitor devices include decoupling capacitors, metal- insulator-metal capacitors (MIMCAPs), junction capacitors, MOS varactors, BEOL metal capacitors, etc. The resistor devices include diffused resistors, silicide blocked polysilicon resistors, BEOL resistors, etc. We present correct statistical models and optimal corner models, and discuss the correctness and goodness of various statistical models and corner models. We explicitly show the dependency of the corner model parameters on the device length/width. For a fixed device length and width, for the first time, we show the dependency of the corner model parameters on the frequency, and show that the skewing direction of some corner model parameters will change their signs when going from the low frequency region to the high frequency/RF region.","PeriodicalId":243121,"journal":{"name":"9th International Symposium on Quality Electronic Design (isqed 2008)","volume":"347 ","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2008-03-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"9th International Symposium on Quality Electronic Design (isqed 2008)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISQED.2008.125","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1

Abstract

We present the statistical SPICE models and associated corner models of passive devices (such as capacitors and resistors) in VLSI semiconductor technologies. The capacitor devices include decoupling capacitors, metal- insulator-metal capacitors (MIMCAPs), junction capacitors, MOS varactors, BEOL metal capacitors, etc. The resistor devices include diffused resistors, silicide blocked polysilicon resistors, BEOL resistors, etc. We present correct statistical models and optimal corner models, and discuss the correctness and goodness of various statistical models and corner models. We explicitly show the dependency of the corner model parameters on the device length/width. For a fixed device length and width, for the first time, we show the dependency of the corner model parameters on the frequency, and show that the skewing direction of some corner model parameters will change their signs when going from the low frequency region to the high frequency/RF region.
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
无源器件的统计模型和频率相关角模型
我们提出了VLSI半导体技术中无源器件(如电容器和电阻器)的统计SPICE模型和相关的角模型。电容器器件包括去耦电容器、金属-绝缘体-金属电容器(MIMCAPs)、结电容器、MOS变容管、BEOL金属电容器等。电阻器器件包括扩散电阻器、硅化阻隔多晶硅电阻器、BEOL电阻器等。提出了正确的统计模型和最优角模型,并讨论了各种统计模型和角模型的正确性和优度。我们显式地显示了角模型参数对设备长度/宽度的依赖性。对于固定的器件长度和宽度,我们首次展示了角模型参数与频率的依赖关系,并且表明一些角模型参数的倾斜方向在从低频区到高频/射频区时会改变其符号。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 去求助
来源期刊
自引率
0.00%
发文量
0
期刊最新文献
A Low Energy Two-Step Successive Approximation Algorithm for ADC Design Robust Analog Design for Automotive Applications by Design Centering with Safe Operating Areas Characterization of Standard Cells for Intra-Cell Mismatch Variations Noise Interaction Between Power Distribution Grids and Substrate Error-Tolerant SRAM Design for Ultra-Low Power Standby Operation
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1