C. Silfvenius, P. Blixt, C. Lindstrom, A. Feitisch
{"title":"Sub 1% per 1 0000 h degradation rate of multimode 805 nm AlInGaAs lasers at 90/spl deg/C QW temperature and 16 mW//spl mu/m","authors":"C. Silfvenius, P. Blixt, C. Lindstrom, A. Feitisch","doi":"10.1109/ISLC.2004.1382776","DOIUrl":null,"url":null,"abstract":"A 200 h life test of nitride passivated AlInGaAs multimode lasers, with more than 20% aluminum, operating at 16 mW//spl mu/m, demonstrated a linear degradation rate of less than 0.1%/1000 h under stress conditions of 90 /spl deg/C QW temperature and 2500 A/cm/sup 2/ current density. No devices failed.","PeriodicalId":126641,"journal":{"name":"2004 IEEE 19th International Semiconductor Laser Conference, 2004. Conference Digest.","volume":"199 5","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2004-09-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2004 IEEE 19th International Semiconductor Laser Conference, 2004. Conference Digest.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISLC.2004.1382776","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
A 200 h life test of nitride passivated AlInGaAs multimode lasers, with more than 20% aluminum, operating at 16 mW//spl mu/m, demonstrated a linear degradation rate of less than 0.1%/1000 h under stress conditions of 90 /spl deg/C QW temperature and 2500 A/cm/sup 2/ current density. No devices failed.
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