Increased EMI immunity in CMOS operational amplifiers using an integrated common-mode cancellation circuit

Marco Grassi, Jean-Michel Redouté, A. Richelli
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引用次数: 10

Abstract

This paper presents an on-chip common-mode cancellation circuit which increases the immunity to electromagnetic interference (EMI) of integrated CMOS operational amplifiers when EMI is injected into their inputs. The circuits have been designed in the UMC 180nm CMOS technology. Two case studies have been considered: first, the common-mode cancellation circuit has been used in a Miller amplifier and secondly, in a folded cascode opamp topology. Circuit simulations and mathematical derivations illustrate how the proposed common-mode cancellation input stage strongly reduces the EMI susceptibility of both opamps, even in the presence of large amplitude interferences. The output offset voltages which are obtained when EMI amplitudes up to 3.3 Vpp are injected in the noninverting inputs of the proposed amplifiers when these are connected in a voltage follower configuration, are reduced by nearly one order of magnitude.
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利用集成共模抵消电路提高CMOS运算放大器的抗电磁干扰能力
本文提出了一种片上共模对消电路,该电路在集成CMOS运算放大器输入端注入电磁干扰时,可提高其抗电磁干扰的能力。电路采用UMC 180nm CMOS技术设计。本文考虑了两个案例研究:首先,共模抵消电路用于米勒放大器,其次,用于折叠级联放大器拓扑。电路仿真和数学推导说明了所提出的共模抵消输入级如何强烈地降低了两个运放大器的电磁干扰敏感性,即使在存在大振幅干扰的情况下也是如此。当电磁干扰幅度高达3.3 Vpp时,当这些放大器以电压跟随器配置连接时,在所建议的放大器的非反相输入中注入输出失调电压,其输出失调电压降低了近一个数量级。
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