{"title":"Group IV TFETs for very low power applications","authors":"Hsu-Yu Chang, J. Woo","doi":"10.1109/SUBVT.2012.6404326","DOIUrl":null,"url":null,"abstract":"Novel source pocket Si Tunnel field effect transistor (TFET) is successfully fabricated by laser annealing. It shows reduced threshold voltage, steep subthreshold swing (46mV/dec), excellent ION/IOFF ratio (>;107) and improved output characteristics due to dramatic reduction of tunneling resistance.","PeriodicalId":383826,"journal":{"name":"2012 IEEE Subthreshold Microelectronics Conference (SubVT)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2012-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2012 IEEE Subthreshold Microelectronics Conference (SubVT)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SUBVT.2012.6404326","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
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Abstract
Novel source pocket Si Tunnel field effect transistor (TFET) is successfully fabricated by laser annealing. It shows reduced threshold voltage, steep subthreshold swing (46mV/dec), excellent ION/IOFF ratio (>;107) and improved output characteristics due to dramatic reduction of tunneling resistance.
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