Photo and electroluminescence from SiNx layers deposited by reactive sputtering

Abstract

Non-stoichiometric silicon nitride layers were sandwiched between indium thin oxide (transparent contact) and n type silicon substrate. These films were deposited by reactive sputtering from silicon target. The composition and thickness were extracted by Rutherford backscattering spectroscopy measurement. Photo and electroluminescence spectra have been compared and there is a considerable difference between emitted wavelengths. Exponential conduction models (Pool-Frenkel and Fowler-Nordheim) were used to fit the experimental data. A linear correlation between electroluminescence intensity and current density has been observed. Electroluminescence spectra at several temperatures (50 to 300 K) were reported.