P. Dorion, O. Cueto, M. Reyboz, J. Barbe, A. Grigoriu, Y. Maday
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Abstract
A TCAD model for Chalcogenide based CBRAM is presented. This model starts from an existing model and uses an advanced level set method to follow the growth of the filament in the electrolyte. We couple the level set method with equations which model the cations migration and the electric field in the electrolyte and in the filament. We take into account silver clusters in the electrolyte in order to study their influence on switching time.
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