Pub Date : 2015-07-27DOI: 10.1109/NANO.2015.7388720
M. Fischetti, W. Vandenberghe, Bo Fu, S. Narayanan, J. Kim, Z. Ong, A. Suarez-Negreira, C. Sachs, S. Aboud
We show that scaling rules, quantum confinement in thin bodies, and the resulting gate leakage render imperative the use of low-dimensionality materials as channels in devices scaled beyond the 10 nm gate length. We then consider a few examples of two-dimensional materials of great interest, graphene and bilayer graphene, and show how the dielectric environment (gate and interlayer insulators, nearby gates) has a dramatically strong effect on the electronic properties of systems such as supported graphene, nanoribbons, and graphene bilayers in which a Bose-Einstein exciton condensation has been predicted to occur at high temperature. Finally, we consider the novel concept of devices based on monolayer tin (`stannanane') as a topological insulator.
{"title":"Physics of electronic transport in low-dimensionality materials for future FETs","authors":"M. Fischetti, W. Vandenberghe, Bo Fu, S. Narayanan, J. Kim, Z. Ong, A. Suarez-Negreira, C. Sachs, S. Aboud","doi":"10.1109/NANO.2015.7388720","DOIUrl":"https://doi.org/10.1109/NANO.2015.7388720","url":null,"abstract":"We show that scaling rules, quantum confinement in thin bodies, and the resulting gate leakage render imperative the use of low-dimensionality materials as channels in devices scaled beyond the 10 nm gate length. We then consider a few examples of two-dimensional materials of great interest, graphene and bilayer graphene, and show how the dielectric environment (gate and interlayer insulators, nearby gates) has a dramatically strong effect on the electronic properties of systems such as supported graphene, nanoribbons, and graphene bilayers in which a Bose-Einstein exciton condensation has been predicted to occur at high temperature. Finally, we consider the novel concept of devices based on monolayer tin (`stannanane') as a topological insulator.","PeriodicalId":101858,"journal":{"name":"2014 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","volume":"15 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-07-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131425409","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-10-23DOI: 10.1109/SISPAD.2014.6931589
M. Ohnishi, Ken Suzuki, H. Miura
In any electronic devices and sensors, internal strain is induced because of the thermal change or the lattice mismatch between different materials. It is, therefore, expected that when carbon nanotubes (CNTs) are used for electronic devices, their electronic properties are changed caused by the deformation. In this study, we study the mechanism of the change in the band gap of CNTs under the radial strain in terms of state density distribution. We found that the spatial distribution of the state density dominates its strain sensitivity, and thus, the strain sensitivity of electronic properties of CNTs. We also calculated the change in the current through the deformed CNTs. The founding indicates that the state density analysis should be useful for the development of novel electronic devices and nano electro mechanical systems and for assuring their reliable performance.
{"title":"Spatial distribution of state densities dominating strain sensitivity of carbon nanotubes","authors":"M. Ohnishi, Ken Suzuki, H. Miura","doi":"10.1109/SISPAD.2014.6931589","DOIUrl":"https://doi.org/10.1109/SISPAD.2014.6931589","url":null,"abstract":"In any electronic devices and sensors, internal strain is induced because of the thermal change or the lattice mismatch between different materials. It is, therefore, expected that when carbon nanotubes (CNTs) are used for electronic devices, their electronic properties are changed caused by the deformation. In this study, we study the mechanism of the change in the band gap of CNTs under the radial strain in terms of state density distribution. We found that the spatial distribution of the state density dominates its strain sensitivity, and thus, the strain sensitivity of electronic properties of CNTs. We also calculated the change in the current through the deformed CNTs. The founding indicates that the state density analysis should be useful for the development of novel electronic devices and nano electro mechanical systems and for assuring their reliable performance.","PeriodicalId":101858,"journal":{"name":"2014 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-10-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115337918","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-10-23DOI: 10.1109/SISPAD.2014.6931599
K. Shimonomura, V. Dao, T. Etoh, Y. Kamakura
Ultra-high speed image sensors have been developed and applied to various field of science and engineering. Toward the temporal resolution of 1ns, we have proposed a new structure of an image sensor, a backside-illuminated multi-collection-gate image sensor (BSI MCG image sensor). In order to evaluate the performance, it is necessary to simulate the paths of photoelectrons from the generation site to a collecting gate. The performance depends on several factors, including randomness in motion of the electrons which is considerable in the design of the sensor operating at the sub-nanosecond time scale. It is impossible to address this factor by using a device simulation based on the drift diffusion model. A Monte Carlo method is an effective tool to evaluate the effect of the randomness. In this paper, factors affecting the temporal resolution of the sensor are studied by using the Monte Carlo simulator.
{"title":"A simulation analysis of backside-illuminated multi-collection-gate image sensor employing Monte Carlo method","authors":"K. Shimonomura, V. Dao, T. Etoh, Y. Kamakura","doi":"10.1109/SISPAD.2014.6931599","DOIUrl":"https://doi.org/10.1109/SISPAD.2014.6931599","url":null,"abstract":"Ultra-high speed image sensors have been developed and applied to various field of science and engineering. Toward the temporal resolution of 1ns, we have proposed a new structure of an image sensor, a backside-illuminated multi-collection-gate image sensor (BSI MCG image sensor). In order to evaluate the performance, it is necessary to simulate the paths of photoelectrons from the generation site to a collecting gate. The performance depends on several factors, including randomness in motion of the electrons which is considerable in the design of the sensor operating at the sub-nanosecond time scale. It is impossible to address this factor by using a device simulation based on the drift diffusion model. A Monte Carlo method is an effective tool to evaluate the effect of the randomness. In this paper, factors affecting the temporal resolution of the sensor are studied by using the Monte Carlo simulator.","PeriodicalId":101858,"journal":{"name":"2014 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","volume":"31 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-10-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131498089","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-10-23DOI: 10.1109/SISPAD.2014.6931623
G. Shine, S. Manipatruni, A. Chaudhry, K. Saraswat, D. Nikonov, I. Young
Spin-resolved conductivities in magnetic tunnel junctions are calculated using a semiempirical tight-binding model and non-equilibrium Green's functions. The performance of half-metallic electrodes is studied by comparing conventional Fe-MgO-Fe structures to Co2FeAl-MgO-Co2FeAl structures. The results show higher tunneling magnetoresistance and resistance-area product for Co2FeAl devices across a wide bias range.
{"title":"Extended Hückel theory for quantum transport in magnetic tunnel junctions","authors":"G. Shine, S. Manipatruni, A. Chaudhry, K. Saraswat, D. Nikonov, I. Young","doi":"10.1109/SISPAD.2014.6931623","DOIUrl":"https://doi.org/10.1109/SISPAD.2014.6931623","url":null,"abstract":"Spin-resolved conductivities in magnetic tunnel junctions are calculated using a semiempirical tight-binding model and non-equilibrium Green's functions. The performance of half-metallic electrodes is studied by comparing conventional Fe-MgO-Fe structures to Co2FeAl-MgO-Co2FeAl structures. The results show higher tunneling magnetoresistance and resistance-area product for Co2FeAl devices across a wide bias range.","PeriodicalId":101858,"journal":{"name":"2014 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","volume":"73 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-10-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131606807","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-10-23DOI: 10.1109/SISPAD.2014.6931562
M. Mochizuki, Hiroyuki Tanaka, H. Hayashi
For the first time, an efficient and universal method to design multiple field limiting rings (FLR) structure, which applicable to power devices with thin drift layer is proposed. Avalanche breakdown simulations of simplified structures are performed in each three area; the near main junction area, the outmost area, and the other. From simulation results, optimal spacing between each neighboring FLR is efficiently extracted. Phenomena related breakdown voltage determination in each area are also clarified. We demonstrate that the edge termination structures designed along our guidelines succeed to obtain the target blocking voltage in different 600 V class processes.
{"title":"Efficient and universal method to design multiple field limiting rings for power devices","authors":"M. Mochizuki, Hiroyuki Tanaka, H. Hayashi","doi":"10.1109/SISPAD.2014.6931562","DOIUrl":"https://doi.org/10.1109/SISPAD.2014.6931562","url":null,"abstract":"For the first time, an efficient and universal method to design multiple field limiting rings (FLR) structure, which applicable to power devices with thin drift layer is proposed. Avalanche breakdown simulations of simplified structures are performed in each three area; the near main junction area, the outmost area, and the other. From simulation results, optimal spacing between each neighboring FLR is efficiently extracted. Phenomena related breakdown voltage determination in each area are also clarified. We demonstrate that the edge termination structures designed along our guidelines succeed to obtain the target blocking voltage in different 600 V class processes.","PeriodicalId":101858,"journal":{"name":"2014 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","volume":"63 4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-10-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132980616","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-10-23DOI: 10.1109/SISPAD.2014.6931576
P. Ellinghaus, M. Nedjalkov, S. Selberherr
The Wigner equation can conveniently describe quantum transport problems in terms of particles evolving in the phase space. Improvements in the particle generation scheme of the Wigner Monte Carlo method are shown, which increase the accuracy of simulations as validated by comparison to exact solutions of the Schrödinger equation. Simulations with a time-varying potential are demonstrated and issues which arise in devices with an externally applied voltage between the contacts are treated, thereby further advancing the Wigner Monte Carlo method for the simulation of semiconductor devices.
维格纳方程可以方便地描述粒子在相空间中演化的量子输运问题。对Wigner - Monte Carlo方法的粒子生成方案进行了改进，通过与Schrödinger方程的精确解的比较，验证了该方法提高了模拟的精度。演示了具有时变电位的模拟，并处理了在触点之间具有外部施加电压的器件中出现的问题，从而进一步推进了用于半导体器件模拟的维格纳蒙特卡罗方法。
{"title":"The Wigner Monte Carlo method for accurate semiconductor device simulation","authors":"P. Ellinghaus, M. Nedjalkov, S. Selberherr","doi":"10.1109/SISPAD.2014.6931576","DOIUrl":"https://doi.org/10.1109/SISPAD.2014.6931576","url":null,"abstract":"The Wigner equation can conveniently describe quantum transport problems in terms of particles evolving in the phase space. Improvements in the particle generation scheme of the Wigner Monte Carlo method are shown, which increase the accuracy of simulations as validated by comparison to exact solutions of the Schrödinger equation. Simulations with a time-varying potential are demonstrated and issues which arise in devices with an externally applied voltage between the contacts are treated, thereby further advancing the Wigner Monte Carlo method for the simulation of semiconductor devices.","PeriodicalId":101858,"journal":{"name":"2014 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","volume":"12 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-10-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134613700","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-10-23DOI: 10.1109/SISPAD.2014.6931574
Sebastien Guarnay, F. Triozon, S. Martinie, Y. Niquet, A. Bournel
Quasi-ballistic electron transport in ultrashort FDSOI devices is analyzed using Multi-Subband Monte Carlo (MSMC) simulations, taking into account the main scattering mechanisms: phonons, surface roughness, and charged impurities in the access regions. In particular, the ballistic resistance (defined as the resistance of the channel in absence of scattering) was extracted from ballistic simulations, and shown to be in good agreement with an accurate analytical model including the contact resistance effect. The simulations show an apparent mobility degradation when the channel length decreases, comparable to that observed in experiments, without requiring any additional scattering mechanism in order to explain it.
{"title":"Monte Carlo study of effective mobility in short channel FDSOI MOSFETs","authors":"Sebastien Guarnay, F. Triozon, S. Martinie, Y. Niquet, A. Bournel","doi":"10.1109/SISPAD.2014.6931574","DOIUrl":"https://doi.org/10.1109/SISPAD.2014.6931574","url":null,"abstract":"Quasi-ballistic electron transport in ultrashort FDSOI devices is analyzed using Multi-Subband Monte Carlo (MSMC) simulations, taking into account the main scattering mechanisms: phonons, surface roughness, and charged impurities in the access regions. In particular, the ballistic resistance (defined as the resistance of the channel in absence of scattering) was extracted from ballistic simulations, and shown to be in good agreement with an accurate analytical model including the contact resistance effect. The simulations show an apparent mobility degradation when the channel length decreases, comparable to that observed in experiments, without requiring any additional scattering mechanism in order to explain it.","PeriodicalId":101858,"journal":{"name":"2014 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","volume":"15 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-10-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115390888","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-10-23DOI: 10.1109/SISPAD.2014.6931630
Y. Oodate, Y. Tanimoto, H. Tanoue, H. Kikuchihara, H. Miyamoto, H. Mattausch, M. Miura-Mattausch
We have investigated the influence of carrier traps on device characteristics in TFTs. In particular, our focus was given on transient characteristics influenced by carrier trapping during device operations. A compact model for circuit simulation of TFTs has been developed by considering the time constant of the trapping. The model was verified with measured frequency dependent TFT characteristics.
{"title":"Compact modeling of carrier trapping for accurate prediction of frequency dependent circuit operation","authors":"Y. Oodate, Y. Tanimoto, H. Tanoue, H. Kikuchihara, H. Miyamoto, H. Mattausch, M. Miura-Mattausch","doi":"10.1109/SISPAD.2014.6931630","DOIUrl":"https://doi.org/10.1109/SISPAD.2014.6931630","url":null,"abstract":"We have investigated the influence of carrier traps on device characteristics in TFTs. In particular, our focus was given on transient characteristics influenced by carrier trapping during device operations. A compact model for circuit simulation of TFTs has been developed by considering the time constant of the trapping. The model was verified with measured frequency dependent TFT characteristics.","PeriodicalId":101858,"journal":{"name":"2014 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","volume":"26 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-10-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116020468","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-10-23DOI: 10.1109/SISPAD.2014.6931587
Seongwook Choi, Y. Park
A simulation method for the TDDB of the BEOL oxide is investigated based on the 3D particle Monte Carlo simulation model which can evaluate the random motion of Cu ions in the oxide. While the conventional models do not consider the percolation theory of the TDDB phenomenon, the new model is based on the percolation model so that more rigorous physics can be considered. Also, the new method enables the statistical analysis of TDDB for the BEOL oxide. From the simulation study, it turns out that the assumptions of the previous models result in inaccurate characteristics and mechanisms. We expect that the simulation framework proposed in this paper could not only lead us to deeper physical insights but also could be readily applied to predict the reliability under the realistic conditions of the interconnect such as the 3D damascene structures or Cu-liner systems and so on.
{"title":"Physical modeling of time dependent dielectric breakdown (TDDB) of BEOL oxide using Monte Carlo particle simulation","authors":"Seongwook Choi, Y. Park","doi":"10.1109/SISPAD.2014.6931587","DOIUrl":"https://doi.org/10.1109/SISPAD.2014.6931587","url":null,"abstract":"A simulation method for the TDDB of the BEOL oxide is investigated based on the 3D particle Monte Carlo simulation model which can evaluate the random motion of Cu ions in the oxide. While the conventional models do not consider the percolation theory of the TDDB phenomenon, the new model is based on the percolation model so that more rigorous physics can be considered. Also, the new method enables the statistical analysis of TDDB for the BEOL oxide. From the simulation study, it turns out that the assumptions of the previous models result in inaccurate characteristics and mechanisms. We expect that the simulation framework proposed in this paper could not only lead us to deeper physical insights but also could be readily applied to predict the reliability under the realistic conditions of the interconnect such as the 3D damascene structures or Cu-liner systems and so on.","PeriodicalId":101858,"journal":{"name":"2014 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","volume":"26 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-10-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116299765","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-10-23DOI: 10.1109/SISPAD.2014.6931595
Hyo-Eun Jung, W. J. Jeong, M. Shin
The performance of uniaxially strained Si nanowires (SiNWs) is investigated with the multiband k.p method. A rigorous quantum-mechanical calculation of hole current based on the non-equilibrium Green's function (NEGF) method is carried out. For both unstrained/strained-SiNWs, the necessity of using the tuned k.p parameters instead of the bulk k.p parameters for nano-scaled devices is examined by benchmarking with the tight-binding (TB) method. The on-current characteristics of the unstrained/strained-SiNWs are analyzed as a function of the aspect ratio of channel length (L) and width (W). The amount of on-current increase due to strain is quantitatively calculated, which shows an increasing behavior with respect to L/W.
{"title":"A study of performance enhancement in uniaxial stressed silicon nanowire field effect transistors","authors":"Hyo-Eun Jung, W. J. Jeong, M. Shin","doi":"10.1109/SISPAD.2014.6931595","DOIUrl":"https://doi.org/10.1109/SISPAD.2014.6931595","url":null,"abstract":"The performance of uniaxially strained Si nanowires (SiNWs) is investigated with the multiband k.p method. A rigorous quantum-mechanical calculation of hole current based on the non-equilibrium Green's function (NEGF) method is carried out. For both unstrained/strained-SiNWs, the necessity of using the tuned k.p parameters instead of the bulk k.p parameters for nano-scaled devices is examined by benchmarking with the tight-binding (TB) method. The on-current characteristics of the unstrained/strained-SiNWs are analyzed as a function of the aspect ratio of channel length (L) and width (W). The amount of on-current increase due to strain is quantitatively calculated, which shows an increasing behavior with respect to L/W.","PeriodicalId":101858,"journal":{"name":"2014 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","volume":"84 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-10-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132332505","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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