Characterizing defects with ion beam analysis and channeling techniques

Abstract

This chapter deals with the use of ion beam analysis (IBA) techniques, in particular in channeling geometry, to study defects in semiconductors. After a tutorial (Section 11.1) introducing the basic principles of IBA and channeling techniques, selected examples of their use to characterize defects (e.g., lattice location of dopants and implantation damage) are described in Section 11.2. Finally, Section 11.3 consists of a brief outlook into future developments and applications.