Ion-beam modification of semiconductors

Abstract

In this chapter, we give an overview of the basic physics and experimental method behind the conventional ion-beam modification of semiconductors. In particular, we describe the basic understanding of the keV ion implantation process used for doping Si and the fascinating amount of materials physics involved in the path from the initial implantation to the dopant activation. We also describe two recent developments related to the physics of implantation: the mechanisms of surface ripple formation and time-resolved experiments used to shed new light on defect migration and interaction processes.