Kangil Kim, I. Chung, Duan Sun, Sangjae Rhe, Ilgweon Kim, Hongsun Hwang, Kangyong Cho, Gyoyoung Jin
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引用次数: 7
Abstract
We investigated threshold voltage degradation and recovery of short channel NMOS transistors in the sub wordline driver (SWD), where the source of NMOS transistors was biased with negative voltage during off-state. We found that the threshold voltage degradation occurred by the off-state hot carrier stress. The gate of NMOS transistor in sub wordline driver (SWD) in the off-state is under the subthreshold region (0
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