{"title":"Engineering TID modeling for the SEE and performances evaluations of integrated CMOS circuits at cryogenic temperatures","authors":"L. Artola, S. Ducret, G. Hubert","doi":"10.1109/radecs47380.2019.9745704","DOIUrl":null,"url":null,"abstract":"This paper presents a total ionizing dose (TID) modeling approach based on experimental Cobalt60 irradiations of n-MOS and p-MOS transistors. The TID models were developed for the investigation of complementary metal oxide semiconductor (CMOS) gates performances used in a readout integrated circuit (ROIC) at cryogenic temperatures.","PeriodicalId":269018,"journal":{"name":"2019 19th European Conference on Radiation and Its Effects on Components and Systems (RADECS)","volume":"150 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2019 19th European Conference on Radiation and Its Effects on Components and Systems (RADECS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/radecs47380.2019.9745704","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
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Abstract
This paper presents a total ionizing dose (TID) modeling approach based on experimental Cobalt60 irradiations of n-MOS and p-MOS transistors. The TID models were developed for the investigation of complementary metal oxide semiconductor (CMOS) gates performances used in a readout integrated circuit (ROIC) at cryogenic temperatures.
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