A Compact SPDT Switch in 0.18um CMOS Process With High Linearity and Low Insertion Loss

Abstract

A compact CMOS SPDT switch fabricated in 0.18 mum BiCMOS technology has been successfully demonstrated at X-Ku-band. The fully integrated chip exhibits a low insertion loss of 1.9 dB and an isolation of 22.5 dB at 17 GHz. By reverse biasing the source/drain (S/D) diode junctions, the switch achieves a PldB of 21 dBm and TOI greater than 30 dB in a very compact structure. The small footprint, along with the performance being comparable to GaAs switches, makes the switch a very attractive, low cost building block circuit for MMIC designs.