{"title":"A 0.5 µm Silicon Bipolar Transistor for Low Phase Noise Oscillator Applications Up to 20 GHz","authors":"C. C. Leung, C. Snapp, V. Grande","doi":"10.1109/MWSYM.1985.1131990","DOIUrl":null,"url":null,"abstract":"An interdigitated silicon bipolar transistor with 0.5 micrometer emitter width and 2 micrometer emitter-emitter pitch has been fabricated which has a measured Fmax greater than 30 GHz. Low phase noise YIG-tuned oscillators with fundamental frequency bands of 4-18 and 8-22 GHz have been demonstrated using this transistor.","PeriodicalId":446741,"journal":{"name":"1985 IEEE MTT-S International Microwave Symposium Digest","volume":"56 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1985-06-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"8","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"1985 IEEE MTT-S International Microwave Symposium Digest","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MWSYM.1985.1131990","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 8
Abstract
An interdigitated silicon bipolar transistor with 0.5 micrometer emitter width and 2 micrometer emitter-emitter pitch has been fabricated which has a measured Fmax greater than 30 GHz. Low phase noise YIG-tuned oscillators with fundamental frequency bands of 4-18 and 8-22 GHz have been demonstrated using this transistor.
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