F. L. Khir, M. Myers, A. Podolska, M. Baker, B. Nener, G. Parish
{"title":"Optimisation studies for AlGaN/GaN-based nitrate sensors","authors":"F. L. Khir, M. Myers, A. Podolska, M. Baker, B. Nener, G. Parish","doi":"10.1109/COMMAD.2012.6472411","DOIUrl":null,"url":null,"abstract":"AlGaN/GaN HEMT (high electron mobility transistor) sensors have been coated with a nitrate selective polymer membrane enabling nitrate ion sensing in water. In this study we optimise the thickness of the nitrate selective membrane to maximise sensor performance (sensitivity).","PeriodicalId":136573,"journal":{"name":"COMMAD 2012","volume":"73 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2012-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"COMMAD 2012","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/COMMAD.2012.6472411","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
AlGaN/GaN HEMT (high electron mobility transistor) sensors have been coated with a nitrate selective polymer membrane enabling nitrate ion sensing in water. In this study we optimise the thickness of the nitrate selective membrane to maximise sensor performance (sensitivity).
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