Darren Wu, Qiu Li, Feifan Wang, Tiantian Li, Tingyi Gu
{"title":"Rapid Thickness Identification Methodology For Two-Dimensional MoS2 and In2 Se3 Nanosheets Using Optical Microscopy","authors":"Darren Wu, Qiu Li, Feifan Wang, Tiantian Li, Tingyi Gu","doi":"10.1109/ISEC49744.2020.9397826","DOIUrl":null,"url":null,"abstract":"Problem StatementCurrently, identification methods for the thickness measurement of nanomaterials demand expensive and nonstandard equipment, impairing its continued study, practical applications, and industrial commercialization.The development of a novel and accurate thickness identification methodology is imperative for the continued study and potential commercialization of two-dimensional (2D) materials. Through experimentation, an effective and straightforward methodology has been produced for the thickness identification of MoS2 and In2 Se3 nanosheets on 300nm Si/SiO2 under optical microscopy from approximately single to decuple layer numbers. The optical contrast difference values of the atomically-thin nanostructures were collected throughout and arranged into a standard reference index which was correlated to height number in nanometers. Using this method, the thickness of a substance could be simply and accurately determined without the use of complex instrumentation, experimental setup, and calculation, therefore, saving time and financial costs.","PeriodicalId":355861,"journal":{"name":"2020 IEEE Integrated STEM Education Conference (ISEC)","volume":"14 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2020-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2020 IEEE Integrated STEM Education Conference (ISEC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISEC49744.2020.9397826","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
Problem StatementCurrently, identification methods for the thickness measurement of nanomaterials demand expensive and nonstandard equipment, impairing its continued study, practical applications, and industrial commercialization.The development of a novel and accurate thickness identification methodology is imperative for the continued study and potential commercialization of two-dimensional (2D) materials. Through experimentation, an effective and straightforward methodology has been produced for the thickness identification of MoS2 and In2 Se3 nanosheets on 300nm Si/SiO2 under optical microscopy from approximately single to decuple layer numbers. The optical contrast difference values of the atomically-thin nanostructures were collected throughout and arranged into a standard reference index which was correlated to height number in nanometers. Using this method, the thickness of a substance could be simply and accurately determined without the use of complex instrumentation, experimental setup, and calculation, therefore, saving time and financial costs.