A Dual-Polarized Broadband Switchable Frequency Selective Rasorber/ Absorber

Aditi Sharma, Saptarshi Ghosh, K. V. Srivastava
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Abstract

In this paper, a dual-polarized active switchable frequency selective structure loaded with PIN diodes has been designed. The proposed geometry switches the working states between a rasorber and an absorber during OFF and ON states of the diode, respectively. The topology is double-layered; the top lossy layer is made of a swastika-shaped cross-dipole geometry with embedded lumped resistors, whereas the bottom layer has a slot geometry loaded with PIN diodes. These diodes are soldered across the slot to exhibit the switching property. During absorption mode, a wide bandwidth having absorptivity above 90% is achieved for the range 4.39 GHz to 13.16 GHz. During the rasorber mode, the absorption bandwidth remains almost constant, whereas an additional transmission peak appears at 12.78 GHz. The proposed design is also made compact, with the unit cell dimensions $0.145 \lambda_{L} \times 0.145 \lambda_{L}$, where $\lambda_{L}$ designates the operating wavelength at the lowest absorption frequency (4.39 GHz).
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一种双极化宽带可切换频率选择吸收器
本文设计了一种负载PIN二极管的双极化有源可切换频率选择结构。所提出的几何开关的工作状态之间的吸波器和吸收器在二极管的关闭和打开状态分别。拓扑结构为双层结构;顶部损耗层由嵌入集总电阻的十字偶极子几何形状制成,而底层具有装载PIN二极管的槽几何形状。这些二极管焊接在槽上,以显示开关特性。在吸收模式下,在4.39 GHz至13.16 GHz的范围内实现了90%以上的吸光率。在吸波器模式下,吸收带宽基本保持不变,而在12.78 GHz处出现了一个额外的传输峰。所提出的设计也非常紧凑,单元尺寸为$0.145 \lambda_{L} \乘以$0.145 \lambda_{L}$,其中$\lambda_{L}$表示最低吸收频率(4.39 GHz)的工作波长。
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